Allicdata Part #: | 1727-3007-2-ND |
Manufacturer Part#: |
PDTA114EM,315 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW SOT883 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA114EM,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02090 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Base Part Number: | PDTA114 |
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A PDTA114EM,315 is a single pre-biased bipolar junction transistor (BJT) designed for a range of applications. It is important to understand both the application fields and the working principle of this device in order to make the most effective use of it. This article will provide an overview of both.
Application Fields
The PDTA114EM,315 is a type of single pre-biased bipoal junction transistor. It is mainly used for signal amplification and in amplifier circuits. Examples of applications that make use of the PDTA114EM,315 include audio amplifiers, RF amplifiers, low-noise amplifiers, and broadband amplifiers. It is also suitable for use in analog and digital signal processing. In addition, the device is designed to be compatible with many standard circuit designs.
The PDTA114EM,315 is also suitable for a range of low-power operation. It is designed to be able to operate in a range of situations where lower power operation is required. For example, the device can be used in applications such as automotive, industrial, and medical equipment that require low-power operation.
Working Principle
The PDTA114EM,315 is a type of single pre-biased bipolar junction transistor. The device works by creating an electric current between the collector and the base electrodes. This current is then amplified by the device and used for a variety of purposes. The amount of current that is produced depends on the amount of bias voltage that is applied to the base electrode.
The PDTA114EM,315 is able to operate over a wide range of frequencies. This is due to the device\'s ability to be biased over a variety of voltages. The device also has a wide temperature range and can operate in temperatures ranging from -55°C to +150°C. This allows the device to be used in a variety of environments.
The PDTA114EM,315 is also designed to be highly efficient in terms of power consumption. This is due to the device\'s ability to amplify the current it produces with minimal power loss. This makes the device suitable for applications where power efficiency is important, such as in low-power operation.
Finally, the PDTA114EM,315 is designed to be highly reliable. The device is designed to be able to withstand shock and vibration, as well as a wide range of environmental conditions. This makes it suitable for a variety of different applications.
In conclusion, the PDTA114EM,315 is a type of single pre-biased bipolar junction transistor. It is mainly used for signal amplification and in amplifier circuits. The device works by creating an electric current between the collector and the base electrodes. It is also highly efficient and reliable, and is suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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