PDTA114EM,315 Allicdata Electronics
Allicdata Part #:

1727-3007-2-ND

Manufacturer Part#:

PDTA114EM,315

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW SOT883
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTA114EM,315 datasheetPDTA114EM,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02090
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Base Part Number: PDTA114
Description

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A PDTA114EM,315 is a single pre-biased bipolar junction transistor (BJT) designed for a range of applications. It is important to understand both the application fields and the working principle of this device in order to make the most effective use of it. This article will provide an overview of both.

Application Fields

The PDTA114EM,315 is a type of single pre-biased bipoal junction transistor. It is mainly used for signal amplification and in amplifier circuits. Examples of applications that make use of the PDTA114EM,315 include audio amplifiers, RF amplifiers, low-noise amplifiers, and broadband amplifiers. It is also suitable for use in analog and digital signal processing. In addition, the device is designed to be compatible with many standard circuit designs.

The PDTA114EM,315 is also suitable for a range of low-power operation. It is designed to be able to operate in a range of situations where lower power operation is required. For example, the device can be used in applications such as automotive, industrial, and medical equipment that require low-power operation.

Working Principle

The PDTA114EM,315 is a type of single pre-biased bipolar junction transistor. The device works by creating an electric current between the collector and the base electrodes. This current is then amplified by the device and used for a variety of purposes. The amount of current that is produced depends on the amount of bias voltage that is applied to the base electrode.

The PDTA114EM,315 is able to operate over a wide range of frequencies. This is due to the device\'s ability to be biased over a variety of voltages. The device also has a wide temperature range and can operate in temperatures ranging from -55°C to +150°C. This allows the device to be used in a variety of environments.

The PDTA114EM,315 is also designed to be highly efficient in terms of power consumption. This is due to the device\'s ability to amplify the current it produces with minimal power loss. This makes the device suitable for applications where power efficiency is important, such as in low-power operation.

Finally, the PDTA114EM,315 is designed to be highly reliable. The device is designed to be able to withstand shock and vibration, as well as a wide range of environmental conditions. This makes it suitable for a variety of different applications.

In conclusion, the PDTA114EM,315 is a type of single pre-biased bipolar junction transistor. It is mainly used for signal amplification and in amplifier circuits. The device works by creating an electric current between the collector and the base electrodes. It is also highly efficient and reliable, and is suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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