Allicdata Part #: | PDTA114EU/MIF-ND |
Manufacturer Part#: |
PDTA114EU/MIF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | RET |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA114EU/MIF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 180MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
Series: | -- |
Part Status: | Last Time Buy |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
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The PDTA114EU/MIF is a field-effect transistor (FET) with pre-biased features. It has a wide variety of applications, including power electronics, automotive, and industrial control. FETs are widely used in the electronic industry due to their easy programmability, low cost, and low on-resistance. The PDTA114EU/MIF is a single-channel FET with pre-biased features, making it ideal for applications requiring high current levels and long-term stability.
The PDTA114EU/MIF is a n-type enhancement-mode FET with an adjustable output voltage. It has an off voltage of –5V, which is below the common ground reference, and an on voltage of +10V, above the reference level. This allows the FET to be used in a variety of applications, providing a wide margin of voltage adjustment.
The PDTA114EU/MIF has two gate terminals and two drain terminals, allowing it to be used in a variety of circuit configurations. In a single-ended configuration, there is a steady voltage between the gate and the drain, and the current flowing between them is determined by the gate-source capacitance. In a dual-ended configuration, the off voltage is applied to one of the gates, while the other gate is used to adjust the voltage between the gate and the source. As the voltage between the gates is increased, the current flowing between them changes accordingly.
The PDTA114EU/MIF has a maximum gate-source voltage of 20V, allowing it to be used in a variety of applications. It is particularly well suited for power supplies, as it can handle higher voltages and higher currents than other types of FETs. Additionally, the PDTA114EU/MIF can be used in sound systems and amplifier circuits, as its small size makes it an ideal choice for high-power applications. It is also well suited for low-noise circuits due to its low on-resistance.
The PDTA114EU/MIF also has a low capacitance between the source and the drain, which helps reduce power supply noise. This feature is especially useful for high-current applications, such as DC-to-DC converters, which need to have both low noise and high current capabilities. Additionally, the PDTA114EU/MIF is capable of operating at frequencies up to 6GHz, making it a viable option for applications requiring high-frequency operation.
Overall, the PDTA114EU/MIF is a great solution for a variety of applications. Its pre-biased features and wide voltage adjustment range make it an ideal choice for power electronics and other high-power applications. Additionally, its low on-resistance and low capacitance make it a great choice for low-noise circuits. Finally, its high-frequency capability means that it is also a viable option for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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