Allicdata Part #: | PDTA123EMB,315-ND |
Manufacturer Part#: |
PDTA123EMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA123EMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 5V |
Base Part Number: | PDTA123 |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 180MHz |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PDTA123EMB, 315 Application Field and Working Principle
The PDTA123EMB, 315 is a single pre-biased bipolar transistor, and as such, can have many applications. Transistors have been widely used in all kinds of electronics applications, with modern-day electronics largely based on them. This article will take a look at the working principle and application field of the PDTA123EMB, 315.
Working Principle
A bipolar transistor consists of three layers of semiconductor material: the base, the collector and the emitter. The bipolar transistor is essentially two diodes connected together, with the base in the middle. When current flows in the base, it creates a voltage across the collector and emitter allowing electrons to flow from the collector to the emitter. This flow of electrons is modulated by the current in the base: the greater the current in the base, the higher the voltage applied to the collector-emitter junction and the greater the electron flow from the collector to the emitter.
The pre-biased feature of the PDTA123EMB, 315 means that it is already biased to operate within a certain current range. The PDTA123EMB, 315 requires an internal bias current of around 3 mA, and an internal bias voltage of around 1V. This helps ensure stable operation and reduces the complexity of the design.
Application Field
The PDTA123EMB, 315 is mainly used for line-level audio amplification in consumer audio equipment, such as audio amplifiers, portable radios and stereo systems. It can also be used in industrial applications such as transducers, motor control, and digital-to-analog converters. It is also used in medical devices, power supplies, and other applications that require current to be regulated or modulated.
The PDTA123EMB, 315 has a power bandwidth of up to 150 MHz; a maximum input current of 8mA and a maximum DC gain of 1000. It also has a wide temperature range of -65°C to 150°C. This makes the PDTA123EMB, 315 ideal for a wide range of applications, including those in harsh environments.
Conclusion
Overall, the PDTA123EMB, 315 is a single pre-biased bipolar transistor, which is mainly used for audio amplification and in many other applications. It has good thermal characteristics, a wide temperature range, and a high power bandwidth. With its many advantages, the PDTA123EMB, 315 is an excellent choice for use in a variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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