Allicdata Part #: | PDTA143TMB,315-ND |
Manufacturer Part#: |
PDTA143TMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA143TMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 180MHz |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Base Part Number: | PDTA143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A PDTA143TMB315 bipolar junction transistor (BJT) is a single, pre-biased semiconductor device commonly used in modern-day electronics and applications. It is a type of three-terminal, junction field-effect transistor (JFET) in which the current-conducting channel between the source and drain terminals is formed by a bias field established by the applied gate-source voltage. The PDTA143TMB315 is a normally-on device, which means that very little current is required to render the transistor in an “on” or “active” state. Because of this, the PDTA143TMB315 is often a more suitable choice for low power applications that require an extremely low activation current, such as data processing and signal control applications.
The PDTA143TMB315 consists of two parts: the base region and the collector region. The base region comprises a pair of junctions (PNP) configured to produce the bias field. The collector region is insulated from the base region, and includes a layer of lightly doped semiconductor material, typically silicon, that provides a low resistance pathway. When the gate-source voltage is applied, the bias field causes electrons to flow between the source and the base region, forming a highly conductive current path.
In terms of its working principle, the PDTA143TMB315 is characterized by its power-processing capabilities. This is because the BJT is able to process both AC and DC voltage levels simultaneously. Furthermore, the BJT “on” state is characterized by a high input impedance and a low output current, thus allowing the PDTA143TMB315 to perform power management and switching. This makes the PDTA143TMB315 well-suited for use in modern-day electronics, especially in applications where speed and efficiency are paramount.
The PDTA143TMB315 is primarily used in applications that require high switching speeds, such as radio and network transmission, control systems, and data processing. Additionally, the PDTA143TMB315 can also be used for analog signal processing in circuits that require low power with low noise levels. It is also commonly used in bi-directional applications such as motor drivers, current sources, and voltage regulators. Furthermore, the extremely low input impedance of the PDTA143TMB315 also allows it to be used in applications where reverse-bias is required, such as voltage level shifters.
In conclusion, the PDTA143TMB315 is a single, pre-biased BJT specifically designed for high switching speed and extremely low activation current. It is primarily used in radio and network transmission, control systems, and data processing applications, as well as for analog signal processing and bi-directional applications. Furthermore, the low input impedance of the PDTA143TMB315 also makes it a suitable choice for applications where reverse-bias is required.
The specific data is subject to PDF, and the above content is for reference
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