Allicdata Part #: | PDTA144EMB,315-ND |
Manufacturer Part#: |
PDTA144EMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTA144EMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Base Part Number: | PDTA144 |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 180MHz |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PDTA144EMB,315 is a single pre-biased bipolar junction transistor (BJT), and as such is used in various electronic applications due to its unique combination of both fast switching speed and power efficiency. The device itself is equipped with a wide range of features, such as its low voltage requirements and wide conductance range, making it a perfect fit for many different applications. Furthermore, the PDTA144EMB,315 is mounted in a small TO-92 package, making it both easy to install and use.
The PDTA144EMB,315 is an NPN transistor which consists of three main parts: an emitter, a collector and a base. As a general rule, these transistors used in electronic circuits are usually arranged as an NPN configuration, as this type of transistor gives relevant information to the circuit\'s operation. In addition to this, the NPN type of transistor provides two key characteristics when it comes to electrical current, namely the ability to either block it or allow it to pass through. The latter is known as its active state, which is when the device is manipulating the current it allows to pass, which in turn affects the circuit\'s output.
In order to achieve its highest performance, the PDTA144EMB,315 must be used with a pre-biased collector to emitter voltage. This means that the collector and emitter must be connected with a specific voltage before the transistor is switched on. This voltage, known as the base voltage, is the threshold needed for the device to be triggered and change the current state, therefore allowing current to flow. This is vital for the device\'s functioning as it is used as the input voltage for the transistor and ultimately guides the way current is regulated.
Essentially, when the base voltage is applied, it causes electrons to move from the base to the collector, thus creating a current that can be then manipulated and changed in direction depending on the circumstances. Since the current gain of the transistor is greatly dependent on its base voltage, the pre-biased collector to emitter voltage increases its efficiency level and ensures that the current is always at an optimal constant within the circuit.
The PDTA144EMB,315 is a must-have component in many different electrical applications. It is widely used in amplifiers, oscillators, various audio devices, computers and many other systems. Its performance and reliability make it the perfect choice for both professionnal and DIY electronics assemblers. Its wide range of features renders it as a versatile device, constantly used in a variety of applications where power and speed are of importance.
In conclusion, the PDTA144EMB,315 is an advanced single pre-biased bipolar junction transistor which contributes to the efficient functioning of many different electrical and electronic devices. The device is both powerful and reliable, and its low voltage requirements makes it easy to integrate into circuits of all sorts. Furthermore, the pre-biased collector to emitter voltage provides the device with a higher performance level, making it the perfect fit for many demanding projects.
The specific data is subject to PDF, and the above content is for reference
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