PDTC114TT,235

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PDTC114

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PDTC114TT,235 is a Transistor - Bipolar (BJT) - Single, Pre-Biased manufactured using an epitaxial-base process and is designed for general-purpose switching and amplifier applications. This unit is constructed with two NPN base and one PNP transistors. Its package provides connections for the collector, base, and emitter of all three transistors.The PDTC114TT,235 features low-noise and excellent isolation characteristics. This unit has an operating frequency range of 100kHz to 1 MHz. It has a large output impedance which allows it to be used as a buffer in applications. The PDTC114TT,235 is ideal for high-voltage and fast switching applications, and it is capable of handling voltage up to 600V.This transistor can be used in a variety of applications, such as power switching, audio amplifiers, and RF amplifiers. Due to its wide range of applications and its high switching speed, the PDTC114TT,235 is a versatile device.The working principle of the PDTC114TT,235 is based on the basic principle of transistors. The three transistors in the unit are connected in a configuration known as Darlington configuration. This configuration increases the gain of the transistor. The current flows from the collector to the base and then to the emitter. The base-emitter junction of the NPN and PNP transistors are forward-biased and the collector-base voltage of the NPN and PNP transistors are reverse-biased. When a voltage is applied to the collector, the current increases and, in turn, the collector-emitter current also increases.The advantages of using the PDTC114TT,235 in applications are many. This transistor is capable of handling large amounts of current, making it suitable for use in high-power applications. Additionally, the superior isolation characteristics of this unit helps to minimize interference and noise. The unit is also capable of working in high temperatures and can be connected directly to the circuit board.The PDTC114TT,235 is a great choice for applications such as switching, amplifiers and other high-power components. Its low-noise characteristics and excellent isolation make it a perfect choice for such applications. It is a durable product and is suitable for use in a variety of applications. For these reasons, the PDTC114TT,235 is considered a great choice for commercial and industrial applications.

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