PDTC124XMB,315 Allicdata Electronics
Allicdata Part #:

PDTC124XMB,315-ND

Manufacturer Part#:

PDTC124XMB,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC124XMB,315 datasheetPDTC124XMB,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05332
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Base Part Number: PDTC124
Supplier Device Package: 3-DFN1006B (0.6x1)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 230MHz
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PDTC124XMB,315 is a single Bipolar (BJT) transistor categorized as Pre-Biased. When connected to the appropriate circuitry and energized, this transistor converts electrical energy into physical motion, acting as a motor drive. Utilizing the semiconductor’s operating principles, the transistor reduces electrical power input to motion output for varying types of devices.

The PDTC124XMB,315 is used in power conversion applications such as the building of power controllers, programmable controllers, or other applications in which power is converted. It is able to handle the flow of power at up to 315W in a range of voltages and frequencies. With its ability to function as a high-current, low-voltage semiconductor, this device is robust and reliable with a long-term operating history.

A key feature of the PDTC124XMB,315 is its predefined bias level. Pre-biased transistors are primed before use to allow for a predetermined range of voltages, enabling quicker installation and improved performance when compared to non-biased models. As such, this device requires no extra configuration and can be placed into almost any application requiring the conversion of electrical power.

The working principle of the PDTC124XMB,315 is based on the interactions of two different currents: one flowing in the collector-to-emitter of the transistor and another flowing through the base. The current in the collector-to-emitter is controlled by the current in the base, which is then regulated by external circuitry. Thus, when a given level of current has been established in the base, it causes a corresponding average level of current to flow in the collector-to-emitter along with its max and min range of variation.

This current in the collector-to-emitter then dissipates the electrical power into the external circuit. In many applications, the current in the collector-to-emitter is used to move a device to cause physical motion. By changing the bias levels and current, transistors like the PDTC124XMB,315 can be used to achieve this desired response.

The PDTC124XMB,315 is a single Bipolar (BJT) transistor categorized as Pre-Biased. With its predefined bias level, it offers quick and reliable power conversion solutions across a range of applications. Its working principle is based on the interactions of the two currents flowing in the collector-to-emitter and through the base, with the former controlled by the latter. It can be used in power conversion applications such as the building of power controllers, programmable controllers, or other applications in which power is converted.

The specific data is subject to PDF, and the above content is for reference

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