PDTC144ET/DG/B2,21 Allicdata Electronics
Allicdata Part #:

PDTC144ET/DG/B2,21-ND

Manufacturer Part#:

PDTC144ET/DG/B2,21

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS RET TO-236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC144ET/DG/B2,21 datasheetPDTC144ET/DG/B2,21 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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PDTC144ET/DG/B2,21 transistors are classified as single, pre-biased Bipolar Junction Transistors (BJT). They are mainly used as drivers, amplifiers, oscillators, rectifiers and motor control, among other applications. As one of the leading devices of their kind, they feature high power, superior performance and superior reliability. This article discusses the application field and working principle of the PDTC144ET/DG/B2,21.

The PDTC144ET/DG/B2,21 single, pre-biased BJT is particularly suited for applications requiring high power, high speed and current transfer operation. Examples include high-speed switching, high-power amplifier applications, induction motor control and frequency converter applications. It is also suitable for a wide range of applications, like power management and telecom systems, or for applications that require high power, high-speed rectification, such as LED lighting.

The single, pre-biased BJT also offers excellent temperature characteristics. This is enabled by its built-in temperature compensation features, which help to improve device performance over a wide range of temperatures. It also features a low voltage drop due to its low-level ohmic resistance, which minimizes power consumption and improves energy efficiency.

The working principle of the PDTC144ET/DG/B2,21 single, pre-biased BJT is based on the injection of minority carriers into the base region. This allows the device to control current flow between the emitter and collector terminals. With its high power capability, superior temperature performance and low voltage drop, it makes an ideal choice for many applications.

The PDTC144ET/DG/B2,21 single, pre-biased BJT is a versatile device that serves a wide range of applications in the industrialized world. Its superior temperature characteristics and low voltage drop make it an ideal choice for applications that require high power, high speed and accuracy. Furthermore, it is well suited for a variety of telecom and power management applications, as well as for induction motor control and frequency converter designs.

The specific data is subject to PDF, and the above content is for reference

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