
Allicdata Part #: | PDTC124TK,115-ND |
Manufacturer Part#: |
PDTC124TK,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 250MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3; MPAK |
Base Part Number: | PDTC124 |
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The PDTC124TK,115 is a single bipolar junction transistor (BJT) pre-biased to a particular voltage potential. It is used usually in circuits that need to switch things on and off quickly, where the BJT can provide an extra level of control to the circuit. This type of transistor is also known as a pre-biased BJT because it is designed to remain at a particular bias point throughout its operating conditions.
The PDTC124TK,115 has a single base connection that allows it to be driven by a single supply voltage. The power to the transistor is typically provided by a bipolar DC supply source. The output is generally connected to the positive rail, and then connected to the negative rail via the collector circuit. The BJTs have a high operating temperature range, enabling them to be used in a range of applications.
The typical application for a pre-biased BJT includes motor control, switching applications and power management. They are frequently employed in automotive applications, as they can provide extra precision and control over the current and voltage supplied to the motor. They are also used in consumer electronics, and are often found in power supplies, computer power controllers and remote control systems.
The working principle of the PDTC124TK,115 is the same as any BJT. To begin with, the transistor must be biased, using a separate DC voltage supply. This means that the base, collector and emitter all need to be connected to their respective, independent DC voltage sources. The BJT works on the principle of junction between the n-type and p-type semiconductors.
When a positive voltage is applied to the base, the current from the collector to the emitter is increased. This, in turn, allows for a larger current to flow from the collector to the emitter. At the same time, the positive voltage applied to the base causes the electrons in the n-type semiconductor to become excited and flow to the p-type semiconductor, creating a strong electric field that opposes the current flow from the collector to the emitter.
When the opposite voltage is applied to the base, the electrons in the p-type semiconductor are forced back to the n-type semiconductor, resulting in a decreased current flow. Thus, the current can be varied according to the base voltage applied. This makes the PDTC124TK,115 an ideal choice for switching applications, as it can easily be regulated to match different load conditions.
In conclusion, the PDTC124TK,115 is a single Bipolar (BJT) Pre-Biased Transistor that is frequently used in a range of applications, such as motor control and power management. It works on the principle of a junction between the n-type and p-type semiconductors and offers a degree of precision and control that other transistors do not offer.
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