PDTC123JK,115 Allicdata Electronics
Allicdata Part #:

PDTC123JK,115-ND

Manufacturer Part#:

PDTC123JK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC123JK,115 datasheetPDTC123JK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTC123
Description

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The PDTC123JK,115 is a single, pre-biased bipolar junction transistor (BJT). It is a semiconductor device commonly used in electronic circuits and systems and is depicted as a three-terminal device.

The transistor can be used to amplify analog signals, switch signals, and modulate signals. The device is often used as a convenient way of biasing other transistors. It provides a known AC input impedance which is useful in some applications. The use of the device in low noise pre-amplifier applications is often necessary, due to its low noise characteristics and low input bias current.

The transistor features an NPN structure. It has a relatively low Vceo, which is the collector-to-emitter voltage for a given Vbe, the base-to-emitter voltage. This allows the transistor to operate at higher current levels than other types of transistors, which results in higher power amplification.

The device has three pins, the base, collector, and emitter. The base is used to control the current flow between the collector and emitter; it acts as the control terminal of the transistor. The emitter is the input terminal, and the collector is the output terminal. An applied voltage to the base triggers the flow of current from the emitter to the collector. This current flow is amplified and results in a voltage gain. The device is most often used as a voltage amplifier, because it has a high current-gain potential.

The device has a low thermal resistance, which makes it suitable for high-frequency applications. This helps with oscillator and amplifier circuits, as the low thermal resistance results in a low heat resistive losses. This allows for higher levels of gain and better control. The small package size also provides for smaller circuit boards.

The device is best suited for applications where speed and accuracy are important. It can be used for low power applications such as amplifiers, switching circuits, and display drivers. It is also suitable for high-current applications such as inductors and motor controls. Additionally, this device is great for audio amplifiers, and it is used in a variety of consumer electronics such as DVD players and video cameras. It is also used in military applications such as radar and missile guidance.

The PDTC123JK,115 is a high-performance transistor with a wide range of applications. Its pre-biased structure makes it ideal for low-noise and preamplifier applications. Its low thermal resistance, small package size, and highcurrent-gain capabilities make it suitable for a variety of applications, from low power applications to high-current applications. This makes it a highly versatile and reliable device.

The specific data is subject to PDF, and the above content is for reference

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