PDTC114YK,115 Allicdata Electronics
Allicdata Part #:

PDTC114YK,115-ND

Manufacturer Part#:

PDTC114YK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC114YK,115 datasheetPDTC114YK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTC114
Description

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The PDTC114YK and PDTC115 are two types of single, pre-biased transistors, referred to as bipolar junction transistors (BJT). These two types of transistors are used in applications such as amplifiers, switching circuits, and other analog circuits.

Bipolar junction transistors (BJT) are three-terminal, active semiconductor devices. BJT\'s are divided into two types; NPN and PNP. An NPN transistor is composed of a thin layer of N-type semiconductor (the base), sandwiched between two P-type semiconductors (the emitter and collector). Similarly, a PNP transistor is composed of a thin layer of P-type semiconductor (the base), sandwiched between two N-type semiconductors (the emitter and collector).

The PDTC114YK and the PDTC115 are two variations of the single, pre-biased bipolar junction transistor (BJT). Both types of transistors have similar characteristics; for example, their peak collector current ranges from 0.1 mA to 1 Amp, and their peak collector-emitter voltage ranges from 30V to 150V. However, the PDTC114YK and the PDTC115 differ in the application field and the operating principle.

The PDTC114YK is used primarily in amplifier and switching applications. The PDTC114YK consists of an NPN transistor that is biased to the "on" state by the presence of a voltage across its base-emitter junction. When an AC signal is applied to the base, the transistor operates in the "linear" mode, creating an amplified output voltage.

The PDTC115, on the other hand, is used primarily for switching applications. The PDTC115 consists of an NPN transistor that is biased to the "off" state by the absence of voltage across its base-emitter junction. When a voltage is applied to the base, the transistor turns "on" and a current can flow from the collector to the emitter. The PDTC115 is often used in the switching circuits of digital integrated circuits, allowing the circuit to switch between its two outputs.

In conclusion, the PDTC114YK and the PDTC115 are two types of single, pre-biased transistors, referred to as bipolar junction transistors (BJT). The PDTC114YK is used primarily in amplifier and switching applications, while the PDTC115 is used primarily for switching applications. Both types of transistors have similar characteristics, but differ in the application field and the operating principle.

The specific data is subject to PDF, and the above content is for reference

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