PDTC123YM,315

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	DFN1006-3
Base Part Number:	PDTC123

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PDTC123YM,315 Application Field and Working Principle

The PDTC123YM,315 is a single, pre-biased series of bipolar junction transistors (BJT) manufactured by STMicroelectronics. It is a small signal transistor with a fast switching speed, making it ideal for a range of applications where a high-frequency signal needs to be responded to quickly. Examples include switching circuits for audio and video, and in switched-mode power supplies.The PDTC123YM,315 is an NPN device designed for surface-mount integration. Its package is an SOT-23-5 type with a maximum collector current I_C of 500mA and a maximum Collector Emitter Voltage V_CE of 80V. The maximum collector-base voltage V_CB is 80V and the maximum Emitter-base voltage V_EB is 5V. The transistor is rated for up to 0.5W at 25°C, and the maximum power dissipation at higher temperatures is determined by the heat sink being used.In terms of its electrical characteristics, the PDTC123YM,315 has an h_FE current gain of 120 at a collector current of 10mA, and an h_FE current gain of 60 at a collector current of 100mA. The h_FE is ideally suited to audio pre-amps and can also be used in digital circuits, as it is capable of withstanding high-frequency pulses. The transition frequency fT of the PDTC123YM,315 is 500MHz.In terms of its physical properties, the PDTC123YM,315 has a maximum height of 1.4mm, a maximum length of 3.2mm and a maximum width of 1.5mm. It weighs 0.2g, making it a lightweight and compact device that is easy to integrate into compact designs.The PDTC123YM,315 operates on a single supply voltage and has built-in over-voltage protection and over-current protection, making it highly reliable and energy-efficient. The device also has a built-in reverse-biased protection from any overload on the reverse-biased collector-base voltage.The PDTC123YM,315 can also be used as an ultra-low current amplifier. With a base current of 0.2mA, the device can provide a current gain of >60 over a wide range of input currents. This makes it ideal for low-power applications where the load current cannot exceed a certain level.The working principle of the PDTC123YM,315 is based on the operation of a bipolar junction transistor. A BJT consists of two PN junctions with two common, connected bases. To switch on a BJT in its NPN form, a positive voltage is applied to the base and a negative voltage is applied to the collector. This creates an electric field that allows electrons to flow from the base to the collector, creating a controlled current. In the PDTC123YM,315, this current is regulated using the h_FE current gain.The PDTC123YM,315 is a single, pre-biased BJT with a small signal response, fast switching speed, and ultra-low current operation, making it suitable for a broad range of applications. From power supplies, to audio and video switching, this transistor can be used to create efficient and reliable circuits with minimal power consumption.

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