Allicdata Part #: | 1727-3031-2-ND |
Manufacturer Part#: |
PDTC115EM,315 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW SOT883 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC115EM,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02116 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Base Part Number: | PDTC115 |
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PDTC115EM,315 Application Field and Working Principle
PDTC115EM,315 is a single-transistor device which is pre-biased for radio-frequency operation. It is well-suited for application in power amplifiers, mixers and oscillators, as well as for RF preamplifier and offset correction circuits in receivers. With an input impedance of 10-50ohms, an output power of up to 20 watts, these transistors are also very suitable for use in integrated circuits.
PDTC115EM,315 transistors are designed with a base collector junction constructed in such a way as to provide exceptional electrical performance and reliability. The emitter structure of the transistor is designed to enable efficient performance of RF signals, and the base collector junction is hermetically sealed to prevent unwanted noise from interfering with the RF signals.
The working principle of PDTC115EM,315 transistors is one of bipolar magnetic emission. This is the same principle as used in vacuum tubes and other bipolar transistors. In this type of transistor, the base collector junction acts like a magnet, with the positive charge on the emitter end of the transistor being transmitted to the base collector junction. This causes current to flow in an alternating direction in a coil or armature connected between the emitter and collector. The magnetic field generated by this current flow provides a servo-controlled feedback loop which controls the main current flow through the transistor.
These transistors are designed to provide a constant voltage output, regardless of temperature or voltage variations. They are also designed to provide low harmonic distortion and high frequency stability. Due to their low power consumption and reliability, the PDTC115EM,315 transistors are commonly used in power amplifiers, mixers, receivers and oscillators.
In order to operate PDTC115EM,315 transistors, they need to be connected to an appropriate power supply. The power supply has to provide the necessary voltage across the terminals of the transistor. The design should also ensure that the power supply does not generate any unwanted radio frequencies. The bias voltage should be adjusted according to the application, and the transistor should be operated in its safe operating range.
PDTC115EM,315 transistors are widely used in many applications due to their excellent power, performance and reliability. They can be used as stand-alone components or as part of an integrated circuit, enabling designers to use them as the basis for efficient power amplifiers, mixers and oscillators. These transistors are also very suitable for use in RF preamplifier and offset correction circuits in receivers.
The specific data is subject to PDF, and the above content is for reference
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