PDTC114TK,115

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The PDTC114TK and PDTC115 are pre-biased, single bipolar junction transistors (BJTs) manufactured by PANJIT. These transistors are ideal for applications that require high speed switching and high pulse current capability.

The PDTC114TK is an NPN transistor with a maximum collector-emitter voltage (Vce) of 30V, a collector-base voltage (Vcb) of 40V, and a current gain (Hfe) of 250. It is capable of switching at high speeds of up to 1MHz and can handle pulse currents up to 5A.

The PDTC115 is a PNP transistor with a maximum Vce of 30V, a Vcb of 40V, and a Hfe of 250. It has very similar characteristics to the PDTC114TK but with a slightly lower collector-base voltage rating of 30V. It can also switch at up to 1MHz and handle up to 5A of pulsed current.

Both the PDTC114TK and the PDTC115 have a unique pre-bias feature, which allows them to be used in applications that require low power operation without having to use additional circuitry. This is achieved by making use of the emitter-base voltage (Veb) which is pre-biased at 2V on these transistors. The low Veb allows them to operate in either a low power linear or low power saturated mode while still being able to handle extremely high pulse currents.

The working principle of these transistors is based on the familiar BJT structure. This consists of a central semiconductor element of either P-type or N-type material with two regions of opposite type material extending from the sides of the center element. The two regions contain an external connection and are known as the collector and the emitter. When a voltage is applied across these two regions, a current will flow between them and this is known as a transistor action.

The PDTC114TK and PDTC115 are ideal for high speed switching and high pulse current applications due to their wide range of operating parameters. The high Hfe of 250 allows them to be used in switching circuits with high efficiency while the pre-biased emitter-base voltage enables them to operate in low power modes.

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