Allicdata Part #: | PDTC144EMB,315-ND |
Manufacturer Part#: |
PDTC144EMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC144EMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Base Part Number: | PDTC144 |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 230MHz |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PDTC144EMB is an NPN pre-biased single transistor developed by NXP Semiconductors. It has been designed primarily for applications in amplifying, switching and driving, as well as in high-frequency switching. The device has a high current gain of 90 (hFE) and a low saturation voltage of 0.2 V (VCE(Sat)) at Ic = 1 A.
The main features of the PDTC144EMB are its small size, low power consumption and low cost. The device is packaged in a surface-mount package and has a built-in isolation wedge, allowing for simple installation and improved thermal dissipation. It is also suitable for use in applications with high power and/or high-voltage requirements.
The PDTC144EMB is a pre-biased transistor, meaning it has been pre-biased at the factory for improved performance. This pre-bias provides increased stability, resulting in lower noise, better thermal performance and improved frequency response.
The device\'s operating temperature range is −40 °C to +150 °C, and it is also capable of operating under a wide range of input voltages (1.0 - 5.5 V).
The 315 application field of the PDTC144EMB includes wideband amplifiers, high-speed switching circuits and driving circuits, such as H-bridge motor drivers and logic circuits.
The working principle of the PDTC144EMB is based on the N-type material of the transistor, which gives it its high current gain. The transistor\'s high current gain is due to the flow of electrons through the base-collector junction, allowing an amplified current to flow from the collector to the emitter. The device also features a high amplification factor (hFE) which is dependent on the bias voltage at the base.
The device\'s high speed switching operation is achieved through the increasing voltage at the collector-emitter junction. This allows for switching between high and low signals very quickly.
The PDTC144EMB is also capable of operating in high-frequency switching applications due to its low "on" resistance and its fast switching speed. The device is capable of performing high speed switching with a maximum achievable frequency of up to 3 MHz.
In conclusion, the PDTC144EMB is an ideal device for applications that require high power and/or high-voltage requirements; including wideband amplifiers, high-speed switching circuits and driving circuits, such as H-bridge motor drivers and logic circuits. The device comes pre-biased for a high level of stability and performance, and operates over a wide range of input voltages (1.0 - 5.5 V) and temperatures (−40 °C to +150 °C).
The specific data is subject to PDF, and the above content is for reference
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