PDTC114ET,235 Allicdata Electronics
Allicdata Part #:

1727-6420-2-ND

Manufacturer Part#:

PDTC114ET,235

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC114ET,235 datasheetPDTC114ET,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01561
30000 +: $ 0.01405
50000 +: $ 0.01249
100000 +: $ 0.01171
250000 +: $ 0.01041
Stock 1000Can Ship Immediately
$ 0.01
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: PDTC114
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 230MHz
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors are electronic components that are widely used in electronic circuits due to their ability to amplify or switch electrical signals. They are widely used in a wide range of electronic devices, such as radios, amplifiers, computers, sensors and many more. One type of transistor is the Bipolar Junction Transistor (BJT), which is commonly used for its high performance, large current capacity and temperature stability.

There are two main types of BJTs: single and dual. Single BJTs are composed of a single p-type semiconductor material and are primarily used for analog signal processing. Dual BJTs contain two p-type semiconductor materials and are typically used for digital signal processing.

One particular BJT is the PDTC114ET,235, which is classified as a single, pre-biased BJT. This type of BJT is designed to help reduce cost and provide a simplified solution for applications that require low-voltage operation and a low bias current. The PDTC114ET,235 consists of two NPN transistors in one package, which are pre-biased with current sinks for DC operating points.

The PDTC114ET,235 has a wide range of applications in the electronics industry. It is commonly used for audio applications, such as amplifiers and echo circuits, as well as for power management and switching applications. The PDTC114ET,235 can also be used for motor control applications and as a switching element for power supplies.

The working principle of the PDTC114ET,235 is based on the current gain principle. This means that the output current (Ic) is related to the input current (Ib) by the gain factor, which is usually expressed as the hFE (or h rebel). The hFE of the PDTC114ET,235 is between 70 and 200, which means that the output current will be between 70 and 200 times the input current.

The PDTC114ET,235 also has a voltage gain, which is the ratio of the output voltage (VO) to the input voltage (VE). This value can range from 0.5 to unity, depending on the bias configuration of the transistor. In some cases, it may require an external resistor to adjust the gain of the transistor.

The PDTC114ET,235 is also designed with a collector-emitter voltage rating of 200 volts, and a DC current rating of 1.5 amperes. It is also designed with an operating temperature range between -55°C and +150°C, making it suitable for a variety of applications.

In conclusion, the PDTC114ET,235 is a single, pre-biased BJT that is designed for low-voltage and low bias current applications. It is commonly used for audio applications, motor control applications, switching applications and power management. The working principle of the PDTC114ET,235 is based on the current gain principle, which means that the output current will be between 70 and 200 times the input current. It has a wide range of applications due to its robust construction and temperature stability.

The specific data is subject to PDF, and the above content is for reference

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