Allicdata Part #: | PDTC114YUF-ND |
Manufacturer Part#: |
PDTC114YUF |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PDTC114YU/SOT323/SC-70 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC114YUF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01561 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 230MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
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PDTC114YUF is a single, pre-biased, Bipolar Junction Transistor (BJT). It is a three-terminal semiconductor device, which can be used to control current across two ports. The terminals are the base, collector, and emitter. The transistor works by changing the current flow from the base to the collector when the base-emitter voltage is varied. This change in voltage is known as "transistor action".
PDTC114YUF is widely used in automotive, industrial, computing and consumer electronics applications. Due to its robust design, it is also suitable for applications with high power and/or high temperature conditions. When used in automotive applications, such as in-car audio systems and engine control modules, the transistor can provide accurate and reliable performance. This transistor has also been used to control relays, motor speed control and motor drive applications.
PDTC114YUF\'s working principle can be understood using the current-voltage relationship of a BJT. At low collector-emitter voltages, the device behaves as an open circuit. As the voltage across the collector-emitter terminals increases, the transistor becomes "on" and a current flows from the collector to the emitter. As the voltage continues to increase, the transistor\'s current gain (β) increases, resulting in more current being allowed to flow from the collector to the emitter. As the voltage across the collector-emitter terminals reaches its "saturation voltage" (Vce(sat)), the maximum current has been allowed to flow and the transistor is "saturated".
In summary, PDTC114YUF is a single, pre-biased bipolar junction transistor (BJT) which is suitable for high-power and/or high-temperature applications. Its internal structure and current-voltage characteristics can be understood by considering its base-emitter voltage, the collector-emitter voltage, and the current gain (β). With its robust design, PDTC114YUF is a reliable and effective solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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