PDTC143XK,115 Allicdata Electronics
Allicdata Part #:

PDTC143XK,115-ND

Manufacturer Part#:

PDTC143XK,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 250MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC143XK,115 datasheetPDTC143XK,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: DTC143
Description

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PDTC143XK,115 transistors are single, pre-biased, bipolar junction transistors (BJTs) that are designed for special applications. These transistors utilize a special design, which gives them superior performance characteristics compared to ordinary transistors. These remarkable transistors are capable of handling higher operating temperatures and have low levels of power dissipation. They are suitable for use in high-power applications where fast switching speeds are required. This type of transistor is suitable for use in many applications, including power supplies, communication systems, and motor control.

Working Principle

Bipolar junction transistors are three-terminal devices in which current flows between two terminals (the base-emitter junction and the collector-emitter junction). In this type of transistor, the base-emitter junction consists of two diodes connected in series. The base-emitter junction is used to control the amount of current that flows through the collector-emitter junction. When a small current is passed through the base-emitter junction a larger current can be passed through the collector-emitter junction, allowing the transistor to act as an amplifier or switch. This type of transistor is often used in circuit designs that require high levels of performance.

Applications Field

PDTC143XK,115 transistors are particularly suitable for use in high-power applications where fast switching speeds are required. This type of transistor is also suitable for use in power supplies and communication systems, such as satellite communication systems, and motor control. These transistors can also be used in audio circuits, where they are used as amplifiers. Furthermore, this type of transistor is suitable for use in high-frequency applications, such as radio receivers, and also in low-power applications where high levels of performance are required.

Conclusion

PDTC143XK,115 transistors are single, pre-biased, bipolar junction transistors (BJTs) that are designed for special applications. These transistors utilize a special design, which gives them superior performance characteristics compared to ordinary transistors. They are suitable for use in high-power applications where fast switching speeds are required and can also be used in power supplies, communication systems, motor control, audio circuits, high-frequency applications, and low-power applications. With their wide range of applications, these transistors are essential components in many different electronics systems.

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