PDTC115EUF Allicdata Electronics
Allicdata Part #:

PDTC115EUF-ND

Manufacturer Part#:

PDTC115EUF

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PDTC115EU/SOT323/SC-70
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC115EUF datasheetPDTC115EUF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01561
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Description

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Bipolar Junction Transistors (BJTs) are widely used in a variety of applications and are particularly popular in the electronics industry. The PDTC115EUF is a single pre-biased PNP transistor designed for use in switching, switching regulate, level control, amplification, and other circuit applications. This NPN transistor is composed of three complete junctions with a central "collector" electrode, which connect the two outermost "emitter" and "base" electrodes.

Characteristic features of a single pre-biased PNP transistor includes its three-terminal base, emitter and collector electrodes and its class AB amplifier operation. The base and emitter electrodes of the PNP devices act as current controlled switches: the base of the device is used to turn the transistor "on" or "off" and the emitter of the device is used to control the level of current flowing between base and collector electrodes. The central collector electrode is used to collect and carry the reversed opposite of the flow of current from the emitters side. This transistor is pre-biased through its collector to ensure the device is either "on" or "off" at the time of manufacture.

The PDTC115EUF is commonly used in power circuits to regulate the supply of power to a controlled load such as a motor, lamp, or other device. The PNP device enables the power to be regulated to the load, ensuring a given output power level is achieved regardless of the operating temperature or fluctuation in the supply voltage. For example, the PNP device can be used in a motor circuit to regulate the amount of power supplied to the motor, thus providing a consistent torque output when the load torque varies or the supply voltage fluctuates.

In addition to power control applications, the PDTC115EUF is also used to provide oversaturation protection to electrical circuits. It works by diverting excess current away from sensitive components running in the circuit, thus avoiding potential damage. The device is also used in level control and signal switching applications, for example in current sensing circuits where it provides a signal to switch off when the current reaches a pre-defined level.

The PDTC115EUF is also suitable for use in other types of amplifier circuit, such as class AB circuits where it is used to control the current flowing in the circuit. As with other PNP transistors, it utilizes the base-emitter junction as a current control switch, the emitter being used to control the level of current flowing between base and collector electrodes.

In conclusion, the PDTC115EUF is a versatile pre-biased PNP transistor that is used in a variety of applications, due to its ability to control power supply and act as a level control and signal switching device. Its three-terminal base, emitter and collector electrodes enable it to be used in a range of circuits, from power regulation to signal switching, ensuring reliable and consistent performance.

The specific data is subject to PDF, and the above content is for reference

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