PMBF4391,215 Allicdata Electronics

PMBF4391,215 Discrete Semiconductor Products

Allicdata Part #:

568-6478-2-ND

Manufacturer Part#:

PMBF4391,215

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET N-CH 40V 250MW SOT23
More Detail: JFET N-Channel 40V 250mW Surface Mount SOT-23 (TO...
DataSheet: PMBF4391,215 datasheetPMBF4391,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08428
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Base Part Number: MBF4391
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The PMBF4391,215 is a unique type of transistor known as a JFET or Junction Field Effect Transistor. It is a three-layer device that uses the electric field to control the flow of current through the device, allowing it to be used as a switch or an amplifier. This article will discuss the application fields and the working principle of the PMBF4391,215 JFET.

Construction

A JFET consists of three main components: the gate, the source and the drain. The gate is the control electrode of the device which applies the electric field to the channel region between the source and drain. The source and drain are two electrodes which are connected to the external circuit and the flow of electric current is controlled by the electric field applied by the gate.

Working Principle

The working principle of the PMBF4391,215 JFET is based on the same principle as all other JFETs. A voltage applied to the gate creates an electric field in the channel between the source and the drain which increases or decreases the resistance of the channel. When the voltage applied to the gate is positive, the channel resistance decreases allowing a greater current flow from source to drain. When the voltage applied to the gate is negative, the channel resistance increases, reducing the flow of current from the source to the drain. In a basic JFET circuit, the gate is connected to a voltage divider which sets the voltage applied to the gate.When a voltage is applied to the gate, the current flow through the device is increased or decreased depending on the applied voltage. This allows the device to be used as a switch or as an amplifier.

Application Field

Due to its unique properties, the PMBF4391,215 JFET is used in various applications. One of the most common applications is as an oscillator. The device can be used as a voltage-controlled oscillator (VCO) which allows the frequency of an oscillating signal to be controlled remotely. The device is also used in amplifier circuits, where the amount of current allowed to flow through the circuit can be precisely regulated. It is also used in power supply circuits where it is used to regulate the output voltage. In addition, the device is also used in digital electronics as both a switch and an amplifier.

Conclusion

In conclusion, the PMBF4391,215 JFET is a versatile device with a wide range of applications. It has a simple construction consisting of three basic components: the gate, the source and the drain. The electric field created by the gate controls the resistance of the channel between the source and the drain, allowing the device to be used as a switch or as an amplifier. The PMBF4391,215 is used in a variety of applications including oscillator, amplifier, power supply and digital electronics.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PMBF" Included word is 19
Part Number Manufacturer Price Quantity Description
PMBF170,215 Nexperia USA... 0.05 $ 1000 MOSFET N-CH 60V 300MA SOT...
PMBF170,235 Nexperia USA... 0.04 $ 1000 MOSFET N-CH 60V 0.3A SOT-...
PMBFJ177,215 NXP USA Inc 0.11 $ 27000 JFET P-CH 30V 0.3W SOT23J...
PMBF4393,215 NXP USA Inc 0.13 $ 66000 JFET N-CH 40V 250MW SOT23...
PMBFJ109,215 NXP USA Inc 0.18 $ 9000 JFET N-CH 25V 250MW SOT23...
PMBFJ308,215 NXP USA Inc 0.14 $ 3000 JFET N-CH 25V 250MW SOT23...
PMBFJ309,215 NXP USA Inc 0.11 $ 1000 JFET N-CH 25V 250MW SOT23...
PMBF4391,215 NXP USA Inc 0.09 $ 1000 JFET N-CH 40V 250MW SOT23...
PMBFJ110,215 NXP USA Inc 0.15 $ 6000 JFET N-CH 25V 250MW SOT23...
PMBFJ111,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 0.3W SOT23J...
PMBF4392,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 250MW SOT23...
PMBFJ112,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 0.3W SOT23J...
PMBFJ310,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 25V 250MW SOT23...
PMBFJ108,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 25V 250MW SOT23...
PMBFJ620,115 NXP USA Inc 0.0 $ 1000 JFET 2N-CH 25V 0.19W 6TSS...
PMBFJ176,215 NXP USA Inc 0.0 $ 1000 JFET P-CH 30V 0.3W SOT23J...
PMBFJ174,215 NXP USA Inc 0.0 $ 1000 JFET P-CH 30V 0.3W SOT23J...
PMBFJ113,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 0.3W SOT23J...
PMBFJ175,215 NXP USA Inc 0.0 $ 1000 JFET P-CH 30V 0.3W SOT23J...
Latest Products
J3A080YXS/T0BY4AG0

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A080YXS/T0BY4AG0 Allicdata Electronics
J3A040YXS/T0BY4571

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A040YXS/T0BY4571 Allicdata Electronics
J3A012YXS/T0BY4551

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A012YXS/T0BY4551 Allicdata Electronics
J2A080GX0/T0BG295,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A080GX0/T0BG295, Allicdata Electronics
J2A040YXS/T0BY424,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A040YXS/T0BY424, Allicdata Electronics
J2A020YXS/T0BY425,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A020YXS/T0BY425, Allicdata Electronics