PMBFJ308,215 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	25V
Drain to Source Voltage (Vdss):	25V
Current - Drain (Idss) @ Vds (Vgs=0):	12mA @ 10V
Voltage - Cutoff (VGS off) @ Id:	1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds:	5pF @ 10V
Resistance - RDS(On):	50 Ohms
Power - Max:	250mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23 (TO-236AB)

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Introduction

A PMBFJ308,215 is a junction field-effect transistor (JFET) typically used in applications where low current and low-noise operation are required. It is a three-terminal device, with a gate and a source at its input, and a drain at its output. This device helps to regulate the current flowing between the source and the gate and can be used to modify the electric current passing into the output.

Application Field

The PMBFJ308,215 is used in a variety of application fields, particularly those, where precise control over current is required.The PMBFJ308,215 is commonly used in audio, signalling and communications equipment, instrumentation and industrial control systems, analog computers, medical devices, and aerospace and defence applications.When used in high frequency applications, the PMBFJ308,215 is preferred over other types of JFET due to its low power and high switching speed. It is also ideal for applications like voltage regulation, high-speed circuit switching, or where small signal amplification is required.

Working Principle

The PMBFJ308,215 works on the same principle as other JFETs, however, it is specifically designed to have relatively low on-state resistance, which makes it suitable for use in low-current applications. This transistor utilizes a reverse-biased p-n diode, which is formed between the gate and the body.When a positive voltage is applied to the gate of the PMBFJ308,215, the diode between the gate and the body becomes forward biased, allowing current to flow. As the voltage is increased, more current is able to flow through the device, due to the increased depletion layer width. This allows for a greater degree of control over the current passing through the device.At the same time, a negative voltage applied to the gate decreases the current flowing through the device. This is because the reverse biased junction forms a higher resistance barrier, preventing current from passing.

Advantages

The PMBFJ308,215 offers a number of advantages over other JFETs. The most notable advantages are its low on-state resistance and low noise. This makes the PMBFJ308,215 ideal for low-current applications and noise-sensitive applications.It is also highly durable and can withstand harsher conditions. The on-state resistance of the PMBFJ308,215 is relatively stable at high temperatures, which makes it suitable for applications that require it to operate in extreme or challenging conditions.Finally, it has a wide common-gate range, which allows it to operate over a wider range of operating frequencies.

Conclusion

In conclusion, the PMBFJ308,215 is a versatile and reliable JFET that can be used in a variety of applications. It offers low on-state resistance, low noise and can withstand harsh conditions. Additionally, its wide common-gate range makes it suitable for a wide range of operating frequencies. Due to these features, this device is ideal for a variety of application fields, such as audio, signalling and communication systems, instrumentation, industrial control systems and aerospace and defence applications.

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