
PMBFJ176,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2082-2-ND |
Manufacturer Part#: |
PMBFJ176,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET P-CH 30V 0.3W SOT23 |
More Detail: | JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 8pF @ 10V (VGS) |
Resistance - RDS(On): | 250 Ohms |
Power - Max: | 300mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | MBFJ176 |
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Transistors are the most commonly used devices in the electronics industry. They have a variety of applications, from amplifying signals to switching loads. This article will explore the application and working principles of the PMBFJ176,215 transistor, which belongs to the JFETs family of transistors.
JFETs, or junction field-effect transistors, are voltage-controlled semiconductor devices with three terminals. When the voltage applied between the source and gate terminals increases, it creates a channel of conduction between the two; this process is known as channel formation. This channel controls the amount of current flowing through the device directly proportional to the voltage between the two terminals. This means that JFETs can be used to amplify signals, as well as to switch currents on and off. In addition, they are very low noise and low distortion due to their symmetrical amplification characteristics.
The PMBFJ176,215 is a JFET featuring an N-channel. It has an 8-pin package with a drain, gate, and source terminal, along with 5 more pins for parasitic diodes and protection. The device is designed for switching and signal amplification, ideal for computer applications, switching power supplies, and analog signal processing.
The working principle of the PMBFJ176,215 is simple. When a voltage is applied to the gate, it creates a barrier between the source and drain. This barrier, known as a depletion region, decreases the amount of current allowed to flow from one terminal to the other. The voltage applied to the gate determines the size of the depletion region, which in turn controls the current between the drain and source terminals. The device can operate in either depletion or enhancement mode, depending on the voltage between the gate and source.
The PMBFJ176,215 can be used in a variety of applications. It offers low threshold voltage, low noise, and high break-down voltage, making it ideal for audio amplification, switching power supplies, and motor controls. In addition, it is capable of operating up to 175 volts, making it suitable for high voltage applications.
In conclusion, the PMBFJ176,215 belongs to the JFETs family of transistors and can be used in switching and signal amplification applications. Its working principle is based on the depletion or enhancement of the gate voltage, which creates a barrier between the source and drain. It offers low noise, high break-down voltage, and the ability to operate up to 175 volts, making it suitable for a variety of applications, from audio amplifiers to motor controls.
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