Allicdata Part #: | PMBF170,235-ND |
Manufacturer Part#: |
PMBF170,235 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 0.3A SOT-23 |
More Detail: | N-Channel 60V 300mA (Ta) 830mW (Tc) Surface Mount ... |
DataSheet: | PMBF170,235 Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.03519 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 830mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 40pF @ 10V |
Vgs (Max): | ±20V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMBF170,235 is a single-gate FET transistor composed of phosphorus, molybdenum, boron and fluorine elements. It belongs to a family of FET type MOS transistors (field effect transistors) and has a low on-resistance and is suitable for applications requiring higher power levels. It is especially applicable for high-side switching and is available in TO-220, TO-251 and SOT-223 packages.
In terms of application field, the PMBF170,235 is ideal for general-purpose applications in the consumer and industrial markets, such as mobile computing, telecommunications, industrial drives, and power converters. It is also suitable for battery-powered portable equipment, especially where low on-resistance and high-side switching capabilities are needed. In particular, it is ideal for automotive ECU load switch applications.
The PMBF170,235 transistor works similarly to other FET type transistors. The device is based on a P-channel MOSFET and uses its gate voltage to control the current flowing between its source and drain. When the gate voltage is positive with respect to the source, the device is “on” and current flows, allowing the load connected to the drain to be powered up. When the gate voltage is negative, the device is “off” and current does not flow. In addition, the voltage applied to the gate affects the current passing through the device, allowing the user to adjust its power level.
For the standard PMBF170,235 gate characteristics, the gate voltage range is typically 0V to 3.2V, and the “on” resistance is typically 115mΩ. The device’s on/off current ratio is typically better than 250:1, and its switching time is typically 4ns. It is capable of handling power levels of up to 30W. It also has a typical breakdown voltage of 70V and a source-drain leakage current of typically 1uA.
The PMBF170,235 transistor is an effective and reliable device for high side switching and other general-purpose applications. It has excellent power handling capabilities and offers an adjustable voltage range for adjusting power levels. Its low “on” resistance and wide voltage range make it suitable for many applications in the consumer and industrial markets, such as automotive and battery-powered portable equipment. Furthermore, its fast switching time makes it ideal for applications where quick response time is needed.
The specific data is subject to PDF, and the above content is for reference
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