PMBFJ174,215 Allicdata Electronics

PMBFJ174,215 Discrete Semiconductor Products

Allicdata Part #:

568-2081-2-ND

Manufacturer Part#:

PMBFJ174,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET P-CH 30V 0.3W SOT23
More Detail: JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO...
DataSheet: PMBFJ174,215 datasheetPMBFJ174,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Resistance - RDS(On): 85 Ohms
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Base Part Number: MBFJ174
Description

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Transistors are important components in integrated circuits and are widely used in the electronics industry. The PMBFJ174,215 is a junction field-effect transistor (JFET) which is a type of field-effect transistor used to control current flow. This article will discuss the applications and working principles of the PMBFJ174,215.

The PMBFJ174,215 is a JFET N-channel Enhancement Mode Silicon-gate field-effect transistor, which is a type of field-effect transistor used to control current flow. It is a low-power device with low voltage and current requirements and has low noise levels. It is widely used in amplifier and switching applications, as well as in circuits for instrumentation, radio and microwave systems.

The working principle of the PMBFJ174,215 can be described as follows. The N-channel JFET consists of two p-type semiconductor regions, separated by an n-type semiconductor region. When a small voltage is applied to the source side of the device, a channel is created between the p-type and n-type regions. The gate of the device controls the channel and gate voltage influences the degree of current flow through the channel.

The PMBFJ174,215 is typically used in amplifier and switching applications, as well as for instrumentation, radio and microwave systems. It can also be used for voltage regulation, voltage stabilisation and as a voltage multiplier. It is also an ideal device for low-power, low-voltage applications, as well as low-noise applications.

The PMBFJ174,215 has several advantages over other JFETs. It has higher current capacity and lower noise levels than other JFETs, and is capable of handling higher signal voltages. It is also more reliable and easier to use than other JFETs. In addition, it has lower power requirements and is suited to low-noise, low-voltage applications.

In conclusion, the PMBFJ174,215 is a versatile and reliable JFET. It is widely used for amplifier and switching applications, as well as for instrumentation, radio and microwave systems. The device has several advantages over other JFETs, including higher current capacity and lower noise levels, making it suitable for low-voltage, low-power applications.

The specific data is subject to PDF, and the above content is for reference

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