PMBFJ109,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-2079-2-ND |
Manufacturer Part#: |
PMBFJ109,215 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 25V 250MW SOT23 |
More Detail: | JFET N-Channel 25V 250mW Surface Mount SOT-23 (TO... |
DataSheet: | PMBFJ109,215 Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.15441 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 40mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 6V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 10V (VGS) |
Resistance - RDS(On): | 12 Ohms |
Power - Max: | 250mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | MBFJ109 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
JFETs, or Junction Field-Effect Transistors, are symbols of modern semiconductor devices, widely used in electronics and modern applications. They are different from other transistors due to the manner in which they operate. Unlike the typical transistors, which use two junctions for their operation, JFETs only use one junction. The PMBFJ109,215 is a unique Junction Field-Effect Transistor, which finds its application in digital circuits.
The PMBFJ109,215 Junction Field-Effect Transistor is a popular three-terminal device that is used in digital circuits. It features a low input and low output capacitance, making it ideal for circuits where signal integrity and signal transmission speed is critical. In addition, it is also capable of providing excellent signal amplification capabilities without sacrificing stability.
The working principle of the PMBFJ109,215 Junction Field-Effect Transistor is based on a single junction. The junction of the PMBFJ109,215 is controlled by the bias voltage. This junction creates a depletion region in the semiconductor, where electrons cannot move freely. The mobility of the carriers in this region is limited, as the electric field created by the bias voltage is acting as a barrier.
When a small voltage is applied to the gate of the PMBFJ109,215 Junction Field-Effect Transistor, the depletion region increases or decreases in size, depending on the polarity of the applied voltage. This change of size of the depletion region affects the current flowing through the junction, acting as an amplifier.
The advantages of the PMBFJ109,215 Junction Field-Effect Transistor include its ability to remain stable even under extreme environmental conditions, and its high power efficiency. Additionally, it has a very fast response time; making it one of the fastest operating transistors in digital circuits.
The main application of the PMBFJ109,215 Junction Field-Effect Transistor is in digital circuits. It can be used to amplify the signal from one circuit to another, improve the signal-to-noise ratio of an analog signal, or act as a buffer for low power signals. It can also be used to create pulsed power, which is used to create various types of digital signals, as well as to provide isolation between circuits.
In conclusion, the PMBFJ109,215 Junction Field-Effect Transistor is a unique transistors, which finds its application in digital circuits. Its working principle is based on a single junction, which is controlled by the bias voltage. Its advantages include its fast response time and stability, and it is capable of providing digital circuits with excellent signal amplification capabilities.
The specific data is subject to PDF, and the above content is for reference
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