PMBFJ112,215 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Voltage - Breakdown (V(BR)GSS):	40V
Drain to Source Voltage (Vdss):	40V
Current - Drain (Idss) @ Vds (Vgs=0):	5mA @ 15V
Voltage - Cutoff (VGS off) @ Id:	5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds:	6pF @ 10V (VGS)
Resistance - RDS(On):	50 Ohms
Power - Max:	300mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23 (TO-236AB)
Base Part Number:	MBFJ112

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Introduction to PMBFJ112,215 Transistor

The PMBFJ112,215 transistor is a type of Junction Field Effect Transistor (JFET) designed for use in a variety of electrical circuit applications. It is a three-terminal semiconductor device with a p-type channel, and it is known for its high-frequency operation ability, low input capacitance, and low noise performance. The PMBFJ112,215 parameaters are a maximum power dissipation of 1.05W, a maximum drain-source voltage of 75V, an operating temperature range of -55°C to 150°C, and a voltage gain of typically up to 32dB.

The Structure of PMBFJ112,215 Transistor

The structural makeup of the PMBFJ112,215 transistor consists of a p-type channel region located between two ohmic contacts known as the source and drain. The drain and the source terminals are connected to the large areas of the p-type substrate, while the gate terminal is connected to the narrow portion of the substrate. The gate region is insulated from the p-type channel by a thin layer of silicon dioxide. As with all JFET transistors, the electrical characteristics of the PMBFJ112,215 are determined by the geometry of the p-type channel region.

PMBFJ112,215 Application Field

The PMBFJ112,215 is commonly used in applications such as audio and video signal amplifiers, audio preamps, voltage followers, and current sources. It is also frequently utilized in switching circuits. Due to its low noise performance, it is often used in consumer electronics such as amplifiers and car audio systems. Additionally, it is well-suited for use in motor controls, medical equipment, and power supplies.

PMBFJ112,215 Working Principle

The principle of operation of the PMBFJ112,215 junction field effect transistor is based on the concept of a p-channel JFET. When a voltage is applied to the gate terminal, the electrons in the source-drain channel are attracted towards the gate. This process reduces the resistance between the source and drain, and increases the current flow from source to drain. The source-drain current is thus used to control the voltage gain of the transistor.Additionally, the depletion-type operation of the PMBFJ112,215 gives it additional features such as a high input impedance and a low output impedance. This makes it well-suited for use in voltage-follower and current-source circuits.

Conclusion

The PMBFJ112,215 Junction Field Effect Transistor is a versatile and reliable semiconductor device that is commonly used in audio and video signal amplifiers, audio preamps, voltage followers, and current sources. It has a low input capacitance, low noise performance, and high-frequency operation ability. Additionally, it has a depletion-type operation which gives it a high input impedance and low output impedance, making it ideal for use in voltage-follower and current-source circuits.

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