PMBF4392,215 Allicdata Electronics
Allicdata Part #:

568-6479-2-ND

Manufacturer Part#:

PMBF4392,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: JFET N-CH 40V 250MW SOT23
More Detail: JFET N-Channel 40V 250mW Surface Mount SOT-23 (TO...
DataSheet: PMBF4392,215 datasheetPMBF4392,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Base Part Number: MBF4392
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PMBF4392,215 is a type of JFET, or Junction Gate Field Effect Transistor, and is commonly used in areas such as amplifiers, switches and receivers in many different electronics applications.A JFET is a three-layer, unlabeled semiconductor device that includes two types of doped materials and an oxide layer between them. The two types of materials on either side of the oxide layer is the P-type and N-type. The P-type contains majority carriers that are positively charged and the N-type contains majority carriers that are negatively charged. The junction formed between the two materials creates a barrier, allowing the charge carriers to be controlled.The working principle of JFETS is fairly simple. The source and the drain constitute the two components of the device and are made of doped material. When an electric field is applied to the drain, it creates a field effect which causes current to flow through the channel between the source and the drain. The current flow is regulated by the gate which is made of oxide material instead of doped material. The gate controls the current flow by either blocking or allowing the flow of current depending on the voltage that is applied to it.In the case of the PMBF4392,215, the device is primarily used as an amplifying device but can also be used as a switch or a receiver in certain applications. As an amplifier, it utilizes the principle of current gain to increase the strength of the input signal. It works by having the voltage applied to the gate control the flow of current between the drain and the source and thus modulating the output signal strength accordingly. This is why the input signal voltage is increased in an amplifying circuit, allowing for more sensitivity and accuracy in the output signal.As a switch, the PMBF4392,215 works by allowing or blocking current through the source and the drain. This is done by controlling the amount of voltage applied to the gate, thus creating an electric field that either blocks or allows the current to pass through. This type of switching is commonly used in certain types of digital circuits and can be used to control the flow of electric current in a wide variety of different applications.Finally, the PMBF4392,215 can also be used as a receiver for radio signals. The incoming radio signal has a relatively very low strength, so it must be amplified in order to be usable. The P-type and N-type materials in the device allow for efficient amplification of the signal as the voltage applied to the gate controls the current flow, thus allowing for more sensitive reception of the signal.In conclusion, the PMBF4392,215 is an advanced Junction Gate Field Effect Transistor that can be used for amplifying, switching and receiving applications in a wide range of electronic systems. Its working principle, based on the control of electric fields, makes it exceptionally useful in many different applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PMBF" Included word is 19
Part Number Manufacturer Price Quantity Description
PMBF170,215 Nexperia USA... 0.05 $ 1000 MOSFET N-CH 60V 300MA SOT...
PMBF170,235 Nexperia USA... 0.04 $ 1000 MOSFET N-CH 60V 0.3A SOT-...
PMBFJ177,215 NXP USA Inc 0.11 $ 27000 JFET P-CH 30V 0.3W SOT23J...
PMBF4393,215 NXP USA Inc 0.13 $ 66000 JFET N-CH 40V 250MW SOT23...
PMBFJ109,215 NXP USA Inc 0.18 $ 9000 JFET N-CH 25V 250MW SOT23...
PMBFJ308,215 NXP USA Inc 0.14 $ 3000 JFET N-CH 25V 250MW SOT23...
PMBFJ309,215 NXP USA Inc 0.11 $ 1000 JFET N-CH 25V 250MW SOT23...
PMBF4391,215 NXP USA Inc 0.09 $ 1000 JFET N-CH 40V 250MW SOT23...
PMBFJ110,215 NXP USA Inc 0.15 $ 6000 JFET N-CH 25V 250MW SOT23...
PMBFJ111,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 0.3W SOT23J...
PMBF4392,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 250MW SOT23...
PMBFJ112,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 0.3W SOT23J...
PMBFJ310,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 25V 250MW SOT23...
PMBFJ108,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 25V 250MW SOT23...
PMBFJ620,115 NXP USA Inc 0.0 $ 1000 JFET 2N-CH 25V 0.19W 6TSS...
PMBFJ176,215 NXP USA Inc 0.0 $ 1000 JFET P-CH 30V 0.3W SOT23J...
PMBFJ174,215 NXP USA Inc 0.0 $ 1000 JFET P-CH 30V 0.3W SOT23J...
PMBFJ113,215 NXP USA Inc 0.0 $ 1000 JFET N-CH 40V 0.3W SOT23J...
PMBFJ175,215 NXP USA Inc 0.0 $ 1000 JFET P-CH 30V 0.3W SOT23J...
Latest Products
J3A080YXS/T0BY4AG0

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A080YXS/T0BY4AG0 Allicdata Electronics
J3A040YXS/T0BY4571

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A040YXS/T0BY4571 Allicdata Electronics
J3A012YXS/T0BY4551

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J3A012YXS/T0BY4551 Allicdata Electronics
J2A080GX0/T0BG295,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A080GX0/T0BG295, Allicdata Electronics
J2A040YXS/T0BY424,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A040YXS/T0BY424, Allicdata Electronics
J2A020YXS/T0BY425,

TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...

J2A020YXS/T0BY425, Allicdata Electronics