PMBFJ177,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-5033-2-ND |
Manufacturer Part#: |
PMBFJ177,215 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET P-CH 30V 0.3W SOT23 |
More Detail: | JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO... |
DataSheet: | PMBFJ177,215 Datasheet/PDF |
Quantity: | 27000 |
3000 +: | $ 0.09480 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 800mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 8pF @ 10V (VGS) |
Resistance - RDS(On): | 300 Ohms |
Power - Max: | 300mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | MBFJ177 |
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PMBFJ177,215 Application Field and Working Principle
Functional JFET Transistors (Junction FETs) are small, active, semiconductor devices that serve as a switch or amplifier. They are generally categorized as low power, medium power, and high power devices, and are used in a wide range of applications, such as audio and video components, telecommunications, automotive electronics, sensing, medical devices, and so on. In this article, we will provide a brief introduction about the PMBFJ177,215 transistor and its application field, along with its working principle.
Introduction to PMBFJ177,215 Transistor
PMBFJ177,215 transistor is a functional JFET transistor rated at 900V and capable of supplying 1a continuous current. This low power-consumption transistor can be used in applications that require moderate power dissipation, such as audio and video components, telecommunications equipment, automotive electronics, sensing, etc. It is available in two packages: TO-220 and TO-3P. The transistor is constructed of three regions, each with their own characteristics. It has a gate, source, and drain electrode, with each electrode having a different purpose.
Application Fields of PMBFJ177,215 Transistor
The PMBFJ177,215 transistor is ideally suited for applications that require moderate power dissipation, such as audio and video components, telecommunications equipment, automotive electronics, sensing, and a wide range of control and power regulating devices. In addition, it can be used in switching applications and can even be used as a substitute for electromagnets in certain applications. The PMBFJ177,215 transistor can also be used in linear devices, such as amplifiers, for its low-voltage characteristics.
Working Principle of PMBFJ177,215 Transistor
The working principle of JFET transistors is based on the principle of reverse bias of PN junction. This reverse bias helps to control the flow of current between the drain and the source terminal. The PMBFJ177,215 transistor works by modulating the electrical charge created by the reverse biased PN junction. The amount of electrical charge is determined by the operating voltage of the transistor. The gate terminal is used to control the amount of charge and thus, the flow of current through the device.
The PMBFJ177,215 transistor operates in two modes: cutoff and saturation. In the cutoff mode, no current flows between the drain and the source. In the saturation mode, the transistor acts as a closed switch and full current flows between the drain and the source. This mode offers high sensitivity, low voltage drop, low noise, and low distortion.
Conclusion
The PMBFJ177,215 transistor is a functional JFET transistor designed for low power applications. It is widely used in audio and video components, telecommunications equipment, automotive electronics, sensing, and various other applications. It offers low voltage drop, low noise, and low distortion characteristics, making it suitable for linear applications such as amplifiers. The PMBFJ177,215 transistor works on the principle of reverse bias of PN junction, and offers two modes of operation: cutoff and saturation.
The specific data is subject to PDF, and the above content is for reference
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