PMBF170,215

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Power Dissipation (Max):	830mW (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	40pF @ 10V
Vgs (Max):	±20V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	300mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PMBF170,215 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that utilizes an insulated gate to control the current between its source and drain. It is a single transistor type and are commonly used in a variety of electronic applications.The key feature of the PMBF170,215 that makes it a popular choice in many applications is its ability to switch on and off extremely quickly. This makes it ideal for use within digital logic circuits and switching power supplies, where fast switching times are necessary. As well as being used for digital logic circuits, the PMBF170,215 is also often used for low-frequency analog applications such as low-noise amplifiers, as well as electromagnetic interference (EMI) filtering, radio frequency (RF) solutions, and other mixed-signal applications.The working principle of the PMBF170,215 is relatively simple and is based on the following relationship: When a voltage is applied to the gate, this creates an electric field, resulting in inversion of the channel between the source and the drain. This provides a low resistance channel between the two, enabling current to pass. When the voltage is removed, the channel reverts back to its high-resistance (non-conducting) state.The operation of the PMBF170,215 is optimized for low-noise, fast switching, and low gate-charge characteristics. It is also designed to be able to withstand large spikes and transients, making it suitable for use in a variety of different environments and applications. Furthermore, the PMBF170,215 is available in a variety of packages, making it highly compatible for different mechanical spaces and footprints.The PMBF170,215 also provides exceptional ESD protection, with some versions offering an ESD rating of up to 2.5 kilovolts. This makes it ideal for sensitive applications, as it can withstand a large range of electrostatic discharges without damage. This feature also makes the PMBF170,215 suitable for use in consumer and industrial (harsh environments) applications.In addition to its low-noise, fast switching, and ESD protection capabilities, the PMBF170,215 also offers superior transconductance and low on-resistance characteristics. It is also capable of operating with a drain-source voltage of up to 175 Volts, which is significantly higher than most transistor types of comparable size. This makes it ideal for use in higher voltage applications.In summary, the PMBF170,215 is a popular choice for use in digital and low-frequency analog solutions, as well as for a variety of other applications. Its low-noise, fast switching, and ESD protection capabilities make it well suited for a range of environments and applications. Furthermore, its low on-resistance and superior transconductance make it suitable for use in higher voltage applications.

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