Allicdata Part #: | PTFA041501E-V4-R0-ND |
Manufacturer Part#: |
PTFA041501E-V4-R0 |
Price: | $ 79.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET LDMOS 28V H-36248-2 |
More Detail: | RF Mosfet LDMOS 28V 900mA 420MHz ~ 500MHz 21dB 150... |
DataSheet: | PTFA041501E-V4-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 71.82070 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | LDMOS |
Frequency: | 420MHz ~ 500MHz |
Gain: | 21dB |
Voltage - Test: | 28V |
Current Rating: | 1µA |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 150W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads |
Supplier Device Package: | H-36248-2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PTFA041501E-V4-R0 is a RF high power amplifier Mosfet transistor characterized by its excellent gain, low noise figure, high efficiency and long operating life. This device is widely used in industrial and consumer applications such as automatic gain control (AGC) systems, wireless systems, microwave ovens, household appliances, security and surveillance systems, audio amplifiers, power supplies, and many more.
The PTFA041501E-V4-R0 is a N-channel enhancement-mode (normally off) device. It manufactures using an advanced 0.25 µm silicon-on-insulator (SOI) dielectric with ultra-low power consumption. The PTFA041501E-V4-R0 is equipped with a built-in D-SUB-type RF RF power detector that monitors power in the RF amplifier.
The PTFA041501E-V4-R0 is a low-cost, high-performance product that is designed to switch DC and AC signals between analog and digital circuits. This device offers excellent electrical and thermal performance when used at frequencies up to 1GHz. The PTFA041501E-V4-R0 features an internal power detector, which is capable of handling power levels up to 200 watts. The low thermal resistance and high maximum operating temperature of 100 °C make the PTFA041501E-V4-R0 ideal for high-power applications.
The PTFA041501E-V4-R0 provides high dynamic range up to +43 dBm for improved system performance, and the integrated over-voltage protection (OVP) ensures hardware protection against input power spikes. The power detector offers excellent linearity performance for accurate linear control.
The PTFA041501E-V4-R0 also features an adjustable gate threshold voltage, which enables precise control of the channel switching speed. The on-resistance is tightly controlled and the gate-to-drain capacitance is reduced to minimize gate ringing and pick-up.
The PTFA041501E-V4-R0 is available in a 3.0mm×3.0mm leadless QFN 48-pin package that is ideal for high-volume, higher-density point-to-point and high-frequency applications. The package can be used in both surface-mount and through-hole mounting configurations.
In summary, the PTFA041501E-V4-R0 is a high-performance RF amplifier designed for RF systems with a wide operating range. It features a low thermal resistance, high maximum operating temperature, integrated power detector, adjustable gate threshold voltage, on-resistance tighter control, and gate-to-drain capacitance reduction. The PTFA041501E-V4-R0 is also available in a leadless QFN 48-pin package, making it ideal for dense point-to-point applications.
The specific data is subject to PDF, and the above content is for reference
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