PTFA260851F V1 R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.68GHz
Gain:	14dB
Voltage - Test:	28V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	900mA
Power - Output:	85W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads
Supplier Device Package:	H-31248-2
Base Part Number:	PTFA260851

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Introduction to PTFA260851F V1 R250

The PTFA260851F V1 R250 is a high-speed MOSFET with excellent RF performance. It is a 25V N-Channel enhancement mode power transistor with mixed signal features. This device has been designed for high performance RF applications, such as broadband and ultra low noise amplifiers, high isolation switches, high isolation splitters, and more.

Application Fields

The PTFA260851F V1 R250 is suitable for a wide range of applications in the RF, wireless and broadband fields, such as both low and high power wireless communications. It can be used in multiple applications in both indoor and outdoor environments.For instance, the device can be used in Wireless Local Area Networks (WLANS), for Wi-Fi, Bluetooh and other applications, for cellphone antennas, for transmitting antennas and for high power, ultra low noise amplifiers.The power dissipation of the device is something to consider when designing a solution, as it is rather limited due to the size, but it has been designed to deliver excellent RF performance at state of the art sensitivity, linearity, dynamic range and return loss demands.

Working Principle

The device operates on an N-channel enhancement mode, which basically means that no gate voltage is required to switch it on. The channel of the transistor is formed by the introduction of “dopants” into a semiconductor material.The drain and source are connected to the power supply and the gate is unconnected, but the junction potential built up between the gate and a specific region of the channel is what will actually control the flow of the current. This potential is created by the applied voltage and it dictates the conductance of the channel.The gate-source voltage (Vgs) determines the current flow in the channel, forming a resistor-like behavior. When the Vgs is higher than the threshold voltage (Vth), which is the minimum voltage required to turn on the device, the current will start flowing, but it will increase with the Vgs, up to a point where the device is saturated.

Conclusion

The PTFA260851F V1 R250 is a high performance MOSFET and is suitable for a wide range of applications in the RF and broadband fields. Its features make it an excellent choice for both low and high power wireless and WLAN applications, such as Bluetooth and Wi-Fi, high isolation switches, splitters, high power amplifiers, cellphone antennas, and more.The device operates on an N-channel enhancement mode, where the junction potential between the gate and a specific region of the channel determines the conductance of the channel. The gate-source voltage needs to be higher than the threshold voltage for the current to start flowing, and it will increase up to a point where the device is saturated. Overall, the PTFA260851F V1 R250 is a reliable, high-performance device for a wide range of applications.

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