PTFA041501F-V4-R0

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PTFA041501F-V4-R0 is a N-Channel Common Source MOSFET used in radio frequency (RF) applications. It is designed for use with wireless networks, such as cellular and personal mobile networks, and radio transmitters. This component uses a phosphor bronze gate metallization and a special structure which provides a high performance even at high frequences.

Application Field

PTFA041501F-V4-R0 is primarily used in low power applications requiring high frequency stability. This component is suitable for switching, resonance, and amplification of high frequency signals up to 2.3GHz. It is commonly used in the manufacture of wireless network antennas, wireless access points, mobile phones, and other RF applications.This component can be used in both portable and stationary wireless networks, and can be used in combination with other components for a more advanced RF design. It also finds applications in radio transmission, such as television broadcast and radio broadcasting systems.

Working Principle

PTFA041501F-V4-R0 is an enhancement-mode MOSFET. The device is formed by an N-type source connected to an N-type drain through an insulated gate. A positive voltage applied to the gate will reduce the resistance between the source and drain, resulting in an increased current flow.The device is designed for low-power applications and as such, it has a low maximum drain-source voltage and channel current. This allows the device to be used in applications with high frequency signals where power dissipation should be minimized. Additionally, it has a low input capacitance, which makes it suitable for high-speed applications.The device uses a high-performance special metallization which reduces gate leakage current and provides improved bias stability at high frequencies. This enables the device to operate at ultra-high frequencies, up to 2.3GHz.The device also has a high on-resistance, ensuring reliable and stable operation. The combination of low input capacitance, a high-performance metallization, and low gate leakage current allows the PTFA041501F-V4-R0 to operate at high frequencies with minimal power dissipation.

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