| Allicdata Part #: | PTFA211801EV5XWSA1TR-ND |
| Manufacturer Part#: |
PTFA211801EV5XWSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | FET RF 65V 2.14GHZ H36260-2 |
| More Detail: | RF Mosfet LDMOS 28V 1.2A 2.14GHz 15.5dB 140W H-362... |
| DataSheet: |  PTFA211801EV5XWSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Transistor Type: | LDMOS |
| Frequency: | 2.14GHz |
| Gain: | 15.5dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.2A |
| Power - Output: | 140W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads |
| Supplier Device Package: | H-36260-2 |
| Base Part Number: | PTFA211801 |
Description
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The PTFA211801EV5XWSA1 is a type of Field Effect Transistor (FET). FETs are able to control the movement of electrons from one area to another and can be used in a variety of application fields. This particular FET features a lower gate-source voltage, a higher breakdown voltage, and an extended frequency range.
A FET works by controlling an electric field which is produced between a gate and the source. The intensity of the electric field is determined by a voltage applied to the gate, which will determine the flow of electrons between the drain and the source. This allows the user to control how much current is allowed to flow between the two using the gate voltage.
The PTFA211801EV5XWSA1 is a Metal Oxide Semiconductor FET (MOSFET), which is a type of FET that utilizes silicon oxide as the electric field isolator. This allows for a wide range of applications, such as high-power switching and power management in medical, new energy, and automotive electronics. This particular FET has a very low gate-source threshold and is capable of operating at very high frequencies, due to its high breakdown voltage (VTO).
The electric field created in a MOSFET is capable of being modulated and adjusted, making them ideal for applications such as radio frequency (RF) systems, where voltage and power transfer must be tightly controlled. The PTFA211801EV5XWSA1 is capable of operating at frequencies of up to 12.8GHz, allowing it to be used in a variety of RF systems. This FET also features an integrated low impedance buffer for optimized RF performance.
The PTFA211801EV5XWSA1 is designed to be an integrated component of many types of systems, and can be found in a variety of application fields. These include power management for a variety of portable electronics, medical equipment, and even automotive electronics. This FET is also capable of operating in a wide range of frequencies, making it ideal for use in RF systems. Lastly, its low gate-source threshold makes it a great option for high frequency, high power systems.
The specific data is subject to PDF, and the above content is for reference
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