PTFA091201GL V1

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	960MHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	750mA
Power - Output:	110W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads
Supplier Device Package:	PG-63248-2
Base Part Number:	PTFA091201

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PTFA091201GL V1 Application Field and Working PrincipleThe PTFA091201GL V1 is a 100V N-Channel Field Effect Transistor (FET) manufactured by Toshiba. It is a top-performance solution optimized for use in high-end broadcast and satellite communication (BTS) applications. This transistor is especially well-suited to build robust, high-power applications. The product\'s performance characteristics and low power consumption make it an ideal choice for designers looking to maximize performance while minimizing power consumption.

Application Fields

The PTFA091201GL V1 is designed primarily for use in broadcast and satellite communication (BTS) applications. It features low noise performance, excellent thermal management, and high power efficiency. This makes the transistor well-suited to build power amplifiers and low-noise, high-efficiency power applications for radio and television broadcasts. Additionally, this transistor is also suitable for base station applications.

Working Principle

The PTFA091201GL V1 is an N-Channel Field Effect Transistor (FET). It has an N-channel–type field effect structure. A field effect structure is an electronic device that is constructed through etching a thin conducting channel, which forms an active area between the source and drain terminals. This active area serves as the basis for a voltage-controlled current that can be modulated by an applied gate voltage.The PTFA091201GL V1 uses a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in the N-Channel configuration. This MOSFET has two opposite gate terminals and two drain terminals connected by a single silicon layer. The gate of the MOSFET is insulated from the conducting channel by interlayer dielectric material, which prevents the current from passing between the source and drain. The gate voltage and drain-source voltage control the source to drain current. The higher the gate voltage and/or the greater the drain-source voltage, the greater the source to drain current. When the gate and drain-source voltage are both equal to 0V, the source to drain current is essentially cut off, as the conducting channel is completely depleted. The PTFA091201GL V1 is a high-performance RF transistor that provides designers with low-cost, low power consumption solutions for robust, high-power applications. It features low noise performance, excellent thermal management, and high power efficiency. The transistor is also highly reliable and offers excellent radio resistance for use in harsh operating environments.

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