PTFA181001HL V1 R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	LDMOS
Frequency:	1.88GHz
Gain:	16.5dB
Voltage - Test:	28V
Current Rating:	1µA
Noise Figure:	--
Current - Test:	750mA
Power - Output:	100W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads, Flanged
Supplier Device Package:	PG-64248-2
Base Part Number:	PTFA181001

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PTFA181001HL V1 R250 Application Field and Working Principle
The PTFA181001HL V1 R250 is a high-performance N-Channel MOSFET developed in a plastic package by Infineon Technologies. Such high voltage/current devices are primarily used in power supply, motor control, and signal conditioning circuits. These MOSFETs offer excellent switching performance, along with an extremely low on-state resistance, making them an effective solution in a range of power application designs. This article provides insights into the features and applications of the PTFA181001HL V1 R250 MOSFET, and explains its working principle.Features of the PTFA181001HL V1 R250
The PTFA181001HL V1 R250 is an N-Channel MOSFET rated at 18 V and with a continuous drain current capability of 1 A. This part is constructed in plastic packages, with a maximum total power dissipation of 250 mW. The part also has an RDS(ON) of 0.22 Ω. It offers exceptionally low on-state resistance at a maximum temperature of 150°C, which makes it an ideal solution for high-efficiency applications. The PTFA181001HL V1 R250 has extremely low thermal resistance, allowing for temperatures up to 150°C. Furthermore, the part is equipped with an ESD (Electrostatic Discharge) rating of 2000V, making it extremely robust and able to handle extreme operating conditions.Applications of the PTFA181001HL V1 R250
The PTFA181001HL V1 R250 is used in a variety of applications, including power supplies, switching circuits, motor control circuits, and signal conditioning systems. It is especially suitable for applications in which low on-state resistance is required and high-current drive and load switching is needed. Thanks to its low RDS(ON), the device is capable of operating with very low losses and increased efficiency in high-frequency applications. This allows for applications such as DC-DC converters and power switching circuits, for instance for AC motor control circuits.The device is also often used for signal conditioning circuit designs. The performance of this MOSFET allows for precise control over the flow of current, making it an ideal choice for such circuits. It is often used in gain or frequency control circuits, such as those used in audio signal conditioning.Working Principle of the PTFA181001HL V1 R250
The PTFA181001HL V1 R250 is a voltage-controlled N-Channel MOSFET. The device is constructed in a plastic package and is comprised of an N-type source, drain, and an insulated gate. The source and drain are connected to a silicon substrate and the insulated gate is connected to a gate terminal.When the gate terminal is connected to a positive voltage, electrons are attracted to the insulated gate and this creates an N-type inversion layer in the silicon substrate between the source and the drain. This allows current to flow between the source and the drain and the device is in an on-state.When the gate voltage is removed, the inversion layer is broken and the device is in an off-state. The resistance between the source and the drain is very high, depending on the properties of the device. The low on-state resistance and the high off-state resistance of the device allow for precise control of current flow.

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