 
                            | Allicdata Part #: | PTFA192401EV4XWSA1-ND | 
| Manufacturer Part#: | PTFA192401EV4XWSA1 | 
| Price: | $ 0.00 | 
| Product Category: | Discrete Semiconductor Products | 
| Manufacturer: | Infineon Technologies | 
| Short Description: | FET RF 65V 1.96GHZ H-36260-2 | 
| More Detail: | RF Mosfet LDMOS 30V 1.6A 1.96GHz 16dB 50W H-36260-... | 
| DataSheet: |  PTFA192401EV4XWSA1 Datasheet/PDF | 
| Quantity: | 1000 | 
| 1 +: | 0.00000 | 
| Series: | -- | 
| Packaging: | Tray | 
| Part Status: | Obsolete | 
| Transistor Type: | LDMOS | 
| Frequency: | 1.96GHz | 
| Gain: | 16dB | 
| Voltage - Test: | 30V | 
| Current Rating: | 10µA | 
| Noise Figure: | -- | 
| Current - Test: | 1.6A | 
| Power - Output: | 50W | 
| Voltage - Rated: | 65V | 
| Package / Case: | 2-Flatpack, Fin Leads | 
| Supplier Device Package: | H-36260-2 | 
| Base Part Number: | PTFA192401 | 
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What is PTFA192401EV4XWSA1?
PTFA192401EV4XWSA1 is a high power-handling RF MOS field-effect transistor (FET). The PTFA192401EV4XWSA1 is designed to operate in a wide range of applications such as VHF/UHF high power amplifiers, harmonic generators and wide-band receivers. This device is immune to latch-up.
Application Field
The PTFA192401EV4XWSA1 is ideally suited for RF amplifier and oscillator applications. This device offers a wide frequency range, high power handling capability, low noise and low distortion. The PTFA192401EV4XWSA1 is designed to operate in VHF/UHF power amplifiers, receivers and harmonic generators. This device is immune to latch-up and can also be used in high power HF/VHF/UHF amplifiers.
Working Principle
The PTFA192401EV4XWSA1 uses a two-stage architecture to achieve its superior performance. The first stage is a FET transistor that operates in depletion mode, providing a low noise, low distortion gain stage. The second stage is a MOSFET transistor that is used to drive the output. The two stages are connected in a feedback configuration to maximize efficiency and linearity.
The PTFA192401EV4XWSA1 operates by using its two-stage architecture to drive its output. The depletion mode FET transistor is used to amplify the input signal, while the MOSFET transistor is used to drive the output. The two stages are connected in a feedback configuration to maximize efficiency and linearity. This combination provides the PTFA192401EV4XWSA1 with superior performance, compared to other RF power MOSFETs.
The PTFA192401EV4XWSA1 is designed to operate in a wide range of applications such as VHF/UHF high power amplifiers, harmonic generators and wide-band receivers. This device is immune to latch-up, providing fast switching and high power-handling capability.
Conclusion
In conclusion, the PTFA192401EV4XWSA1 is an RF MOS field effect transistor (FET) that is designed for use in a wide range of applications. The device offers superior performance, such as wide frequency range, high power handling capability and low distortion. The two-stage architecture of the PTFA192401EV4XWSA1 helps to provide its users with efficient, linear, and high power handling capability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description | 
|---|
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| PTFA212001F1V4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC RF POWER TRANSISTORRF ... | 
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| PTFA080551E V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 55W H-362... | 
| PTFA082201EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 894MHZ H-36260... | 
| PTFA260851F V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 85W H-312... | 
| PTFA091201GL V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 120W PG-6... | 
| PTFA091201HL V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 120W PG-6... | 
| PTFA142401FLV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 240W H-34... | 
| PTFA092213FLV5R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS H-34288-6... | 
| PTFA192401EV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 1.96GHZ H-3626... | 
| PTFA190451FV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 45W H-372... | 
| PTFA192401FV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 240W H-37... | 
| PTFA181001EV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W H-36... | 
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| PTFA241301F V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 130W H-30... | 
| PTFA220041M-V4-R1K | Cree/Wolfspe... | 5.31 $ | 1000 | RF MOSFET TRANSISTORSRF M... | 
| PTFA260851E V1 R250 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.68GHZ H-3024... | 
| PTFA210701EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 70W H-362... | 
| PTFA211801EV5XWSA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.14GHZ H36260... | 
| PTFA092201FV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 220W H-37... | 
| PTFA181001GL V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W PG-6... | 
| PTFA190451EV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 45W H-362... | 
| PTFA192001FV4FWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 200W H-37... | 
| PTFA092211ELV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF LDMOS 220W H33288-... | 
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| PTFA181001HL V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W PG-6... | 
| PTFA210601F V4 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 60W H-372... | 
| PTFA181001EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W H-36... | 
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| PTFA260851E V1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.68GHZ H-3024... | 
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