PTFA192401EV4XWSA1 Allicdata Electronics
Allicdata Part #:

PTFA192401EV4XWSA1-ND

Manufacturer Part#:

PTFA192401EV4XWSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: FET RF 65V 1.96GHZ H-36260-2
More Detail: RF Mosfet LDMOS 30V 1.6A 1.96GHz 16dB 50W H-36260-...
DataSheet: PTFA192401EV4XWSA1 datasheetPTFA192401EV4XWSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.96GHz
Gain: 16dB
Voltage - Test: 30V
Current Rating: 10µA
Noise Figure: --
Current - Test: 1.6A
Power - Output: 50W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads
Supplier Device Package: H-36260-2
Base Part Number: PTFA192401
Description

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What is PTFA192401EV4XWSA1?

PTFA192401EV4XWSA1 is a high power-handling RF MOS field-effect transistor (FET). The PTFA192401EV4XWSA1 is designed to operate in a wide range of applications such as VHF/UHF high power amplifiers, harmonic generators and wide-band receivers. This device is immune to latch-up.

Application Field

The PTFA192401EV4XWSA1 is ideally suited for RF amplifier and oscillator applications. This device offers a wide frequency range, high power handling capability, low noise and low distortion. The PTFA192401EV4XWSA1 is designed to operate in VHF/UHF power amplifiers, receivers and harmonic generators. This device is immune to latch-up and can also be used in high power HF/VHF/UHF amplifiers.

Working Principle

The PTFA192401EV4XWSA1 uses a two-stage architecture to achieve its superior performance. The first stage is a FET transistor that operates in depletion mode, providing a low noise, low distortion gain stage. The second stage is a MOSFET transistor that is used to drive the output. The two stages are connected in a feedback configuration to maximize efficiency and linearity.

The PTFA192401EV4XWSA1 operates by using its two-stage architecture to drive its output. The depletion mode FET transistor is used to amplify the input signal, while the MOSFET transistor is used to drive the output. The two stages are connected in a feedback configuration to maximize efficiency and linearity. This combination provides the PTFA192401EV4XWSA1 with superior performance, compared to other RF power MOSFETs.

The PTFA192401EV4XWSA1 is designed to operate in a wide range of applications such as VHF/UHF high power amplifiers, harmonic generators and wide-band receivers. This device is immune to latch-up, providing fast switching and high power-handling capability.

Conclusion

In conclusion, the PTFA192401EV4XWSA1 is an RF MOS field effect transistor (FET) that is designed for use in a wide range of applications. The device offers superior performance, such as wide frequency range, high power handling capability and low distortion. The two-stage architecture of the PTFA192401EV4XWSA1 helps to provide its users with efficient, linear, and high power handling capability.

The specific data is subject to PDF, and the above content is for reference

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