PTFA142401FLV4XWSA1 Allicdata Electronics
Allicdata Part #:

PTFA142401FLV4XWSA1-ND

Manufacturer Part#:

PTFA142401FLV4XWSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC FET RF LDMOS 240W H-34288-2
More Detail: RF Mosfet LDMOS 30V 2A 1.5GHz 16.5dB 240W H-34288-...
DataSheet: PTFA142401FLV4XWSA1 datasheetPTFA142401FLV4XWSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.5GHz
Gain: 16.5dB
Voltage - Test: 30V
Current Rating: 10µA
Noise Figure: --
Current - Test: 2A
Power - Output: 240W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-34288-2
Description

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PTFA142401FLV4XWSA1 is a type of RF MOSFET which is widely used in various applications related to microwave power amplifiers, and switching circuits. As a high performance device, the PTFA142401FLV4XWSA1 is designed and manufactured to provide superior switch performance, very low losses and high breakdown voltages.

Application Field

PTFA142401FLV4XWSA1 is an ideal solution for RF power amplifier applications, corporate wireless networking or any other application where a neutral power amplifier is desired, due to its low-distortion capabilities and low noise characteristics. The device offers a wide range of performance options and is suitable for both linear and pulsed operation. With its integrated voltage-controlled gate driver and high gate-to-ground capacitance, it provides a stable operating point and excellent dynamic performance.

The main application fields of the PTFA142401FLV4XWSA1 are the following:

  • Wireless Communications
  • Satellite Communications
  • Digital Broadcasting
  • Radar Systems

Working Principle

PTFA142401FLV4XWSA1 is a two-terminal device with a voltage-controlled gate terminal and a symmetric drain-to-source current path. The device operates under the principles of majority carrier device, where the applied gate voltage controls the size of the current flow between the source and drain terminals. When the voltage applied to the gate is a positive voltage, the Drain-to-Source current is increased, and when it is a negative voltage, it is decreased. The device thus acts as a switch, with the gate voltage acting as the control element.

The device also incorporates a voltage-controlled gate driver, as well as high gate-to-ground capacitance, which has a very significant influence on the operating characteristics of the device. The gate-to-ground capacitance is the active element responsible for providing voltage gain in the open-loop amplifier configuration and is necessary to maintain the operating frequency in the linear region over the desired frequencies. By controlling the gate voltage, the gate driver also controls the gain of the amplifier and maintains the desired frequency as the output load changes.

The device has a very low gate threshold, allowing for very fast switching times and excellent switching linearity, which makes it ideal for use in radar systems that require fast pulse response times. The device is also well-suited for applications where low-distortion is desired, such as corporate wireless networking, due to its very low noise characteristics.

By incorporating the above-mentioned features into its design, the PTFA142401FLV4XWSA1 is an excellent choice to build high-performance RF amplifiers and switches.

The specific data is subject to PDF, and the above content is for reference

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