PTFA211801E-V5-R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS
Frequency:	2.14GHz
Gain:	15.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	140W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads
Supplier Device Package:	H-36260-2
Base Part Number:	PTFA211801

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The PTFA211801E-V5-R250 is a radio frequency (RF) low-power, N-channel enhancement mode insulated-gate field effect transistor (MOSFET) designed for use in high frequency and microwave applications. It features a 30V drain-source break down voltage, a 7nsec turn-on time, a 100W power dissipation, and an operating temperature range from -55°C to +125°C.A field effect transistor (FET) is a three-terminal, voltage controlled device with a gate terminal that is used to control the electron flow through the source and drain terminals. It operates based on the "field effect" where a voltage at the gate terminal creates an electric field that affects the flow of electrons that comes through the source terminal to the drain terminal. FETs are used in a variety of applications, including RF, analog and digital circuits.The PTFA211801E-V5-R250 MOSFET is specially designed for use in high frequency and microwave applications. It is a low-power N-channel enhancement mode MOSFET that has a 7nsec turn-on time and a 100W power dissipation. It features a 30V drain-source break down voltage and an operating temperature range from -55°C to +125°C. These features make the PTFA211801E-V5-R250 ideal for applications requiring good thermal stability and reliability.This MOSFET is made using an advanced trench gate process that results in excellent performance characteristics. It has a small footprint package and a fixed gate-drain capacitance of 12pF making it well suited for use in high frequency and microwave applications. The high peak current makes it ideal for power switching applications where a fast response is required.The PTFA211801E-V5-R250 is the perfect choice for applications such as power conversion, power amplification, radio frequency power switching, and high frequency switching applications. It can also be used in a variety of other RF, analog, and digital circuits.In summary, the PTFA211801E-V5-R250 is a radio frequency (RF) low-power, N-channel enhancement mode insulated-gate field effect transistor (MOSFET). It is specially designed for use in high frequency and microwave applications and is ideal for applications requiring good thermal stability and reliability. It has excellent performance characteristics such as a 7nsec turn-on time, a 100W power dissipation, a 30V drain-source break down voltage, and an operating temperature range from -55°C to +125°C which make it the perfect choice for RF, analog, and digital circuits.

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