| Allicdata Part #: | PTFA192401FV4R250XTMA1TR-ND |
| Manufacturer Part#: |
PTFA192401FV4R250XTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC FET RF LDMOS 240W H-37260-2 |
| More Detail: | RF Mosfet LDMOS 30V 1.6A 1.96GHz 16dB 50W H-37260-... |
| DataSheet: | PTFA192401FV4R250XTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.96GHz |
| Gain: | 16dB |
| Voltage - Test: | 30V |
| Current Rating: | 10µA |
| Noise Figure: | -- |
| Current - Test: | 1.6A |
| Power - Output: | 50W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads, Flanged |
| Supplier Device Package: | H-37260-2 |
| Base Part Number: | PTFA192401 |
Description
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IntroductionPTFA192401FV4R250XTMA1 is an advanced FET that is widely used in a variety of RF applications. It is a type of Field-effect Transistor (FET) that is designed to work at high frequencies, up to 4GHz, and is suitable for a wide range of applications such as imaging systems, low noise amplifiers, instrumentation and communications systems. This type of FET is manufactured using a silicon-based process, which provides the high frequency performance, low noise and low power dissipation.
Applications
The PTFA192401FV4R250XTMA1 is a dual gate FET that is ideal for use in applications that require high frequencies and low noise performance. It is often used in various RF applications, such as low noise amplifiers, mixers, receivers, transmitters, instrumentation and communications systems. It can also be used in imaging systems, where it can be used to ensure that the signal is free of any noise.\'\'
In addition, the PTFA192401FV4R250XTMA1 can be used in a wide range of other applications such as switching circuits, power amplifiers, high-speed modems, power supply units and high speed logic circuits. It can also be used in high-temperature applications, such as industrial heating circuits.
Working Principle
The PTFA192401FV4R250XTMA1 works on the principle of field-effect transistors (FETs). When an input voltage is applied to the gate of the transistor, it creates an electric field, which modulates the current flow between the source and drain. This modulation of the current flow allows for precise control of the current, making it ideal for use in high-frequency applications. The FET also has low capacitance and low resistance, which make it ideal for low noise, high-speed applications. The PTFA192401FV4R250XTMA1 also has a low power consumption, which makes it ideal for use in applications where power efficiency is important. The device also has thermally limited performance, which helps to ensure that it can operate safely in high temperature applications.In addition to its electrical characteristics, the PTFA192401FV4R250XT
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PTFA192401FV4R250XTMA1 Datasheet/PDF