PTFA041501E-V4-R250

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PTFA041501E-V4-R250 is a vertical high-power n-channel LDMOS field effect transistor designed for use in the industrial, scientific and medical (ISM) frequency bands. It is suitable for use in applications such as broadband amplifiers, base stations, mobile radios and other highly linear power amplifiers. The device is manufactured using 30nm Ultra-Thin Gate Oxide transistor process, and has been designed to offer high efficiency and high power output up to 500 watts in the UHF frequency range for applications operating in the range of 400 to 410 MHz.

The PTFA041501E-V4-R250 is a specialized type of field effect transistor (FET) and more specifically a type of metal oxide semiconductor FET, often referred to as a MOSFET. This type of FET is widely used and has become the standard for most RF applications because of its unique properties and characteristics. This device is especially well suited for radio frequency (RF) applications due to its high gain, low noise, and low distortion capabilities.

FETs rely on a thin insulating layer of material, called the gate oxide, which serves as an intermediary between the gate layer (gate electrode) and the semiconductor substrate. When a voltage is applied to the gate electrode, it causes a flow of current, or electron flow, to occur in the semiconductor material. This electron flow is called the channel, and it results in a charge at the gate oxide layer, which in turn modulates the current flow between the drain and the source terminals.

The PTFA041501E-V4-R250 makes use of a low drain-source on-resistance, low noise figure, low capacitance and high linearity to enable high efficiency power amplification in a relatively small package. This type of transistor also offers a wide operating temperature range and high ruggedness, making it ideal for use in environments subject to thermal cycling or shock and vibration.

In terms of its working principle, the PTFA041501E-V4-R250 functions similarly to other types of FETs. When the gate voltage is increased, the drain-source current also increases, producing gain in the process. In addition, this transistor offers excellent noise, thermal, and frequency performance characteristics, making it a great choice for RF applications such as base stations, power amplifiers and communication systems.

Overall, the PTFA041501E-V4-R250 is an excellent choice for radio frequency applications as it offers a unique combination of features. By making use of high efficiency, high power output, high linearity, and low distortion characteristics, the PTFA041501E-V4-R250 can be used in a range of applications for maximum performance.

The specific data is subject to PDF, and the above content is for reference