PTFA081501E1V4T500XWSA1 Allicdata Electronics
Allicdata Part #:

PTFA081501E1V4T500XWSA1-ND

Manufacturer Part#:

PTFA081501E1V4T500XWSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC RF FET LDMOS H-36248-2
More Detail: RF Mosfet
DataSheet: PTFA081501E1V4T500XWSA1 datasheetPTFA081501E1V4T500XWSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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PTFA081501E1V4T500XWSA1 is a Radial FET, and is part of the FETs (Field-Effect Transistors) family, which also includes MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors. This particular FET comes in a Radial package and is rated for 500W. It is specifically designed for RF (Radio Frequency) applications and its working principle can be described as follows.

The basic operation of a FET (Field-Effect Transistor) is based on the electric field. A voltage applied between the gate and the source gives rise to depletion of electrons resulting in an electric field leading to current flow along the channel between the drain and the source. The electric field affects the conductivity of the channel and thus modulates the current through it. In the case of the PTFA081501E1V4T500XWSA1, the power the FET can handle is proportional to the voltage applied on the gate.

The application area for the PTFA081501E1V4T500XWSA1 is mainly in the field of Radio Frequency (RF). It is used for frequency upconversion, downconversion and signal amplifier applications. Its low capacitance and low gate resistance make it well suited for high-frequency circuits. It is capable of handling 500W of power, allowing for a wide range of applications. It can also be used in other areas such as high-fidelity audio systems, high-speed digital circuits and DC-DC switching regulators.

The work principles of the PTFA081501E1V4T500XWSA1 is based on the semiconductor effect, which means that when a voltage is applied to the gate, it passes through the insulating layer between the gate and the semiconductor material, and builds up a tunnel effect — a kind of semiconductor that can control electrical current. The higher the voltage, the larger the tunnel effect, so the more power is able to be transmitted through the FET. This process is known as the B-Voltage Effect.

In conclusion, the PTFA081501E1V4T500XWSA1 FET is ideal for RF applications requiring upconversion, downconversion and signal amplifier functions. Its 500W power capacity allows for a wide range of uses, such as audio systems, digital circuits and DC-DC switching regulators. Its low capacitance and low gate resistance also make it well suited for high-frequency circuits. Its working principle is based on the semiconductor effect, which provides an efficient way to control electrical current. It is a versatile FET that is especially well-suited for RF applications.

The specific data is subject to PDF, and the above content is for reference

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