
Allicdata Part #: | PTFA180701FV4FWSA1TR-ND |
Manufacturer Part#: |
PTFA180701FV4FWSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC FET RF LDMOS 70W H-37265-2 |
More Detail: | RF Mosfet LDMOS 28V 550mA 1.84GHz 16.5dB 60W H-372... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.84GHz |
Gain: | 16.5dB |
Voltage - Test: | 28V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 550mA |
Power - Output: | 60W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-37265-2 |
Base Part Number: | PTFA180701 |
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The PTFA180701FV4FWSA1 semiconductor device is an RF FET (field-effect transistor) with a packagedV4 Package. It is used in radio frequency and microwave applications, including Wi-Fi, cellular phone technology, and short-range wireless communication systems. This device is the latest evolution of RF FETs, which have been around for decades. Its unique feature is that it combines both good linearity and very small size, making it ideal for applications in which power or size are important factors.
Basically, an RF FET consists of a source, a drain, and a gate. The source and drain are two of the three terminals connected to the semiconductor body. When a voltage is applied to the gate, current flows between the source and drain. The amount of current is determined by the voltage applied to the gate. In the case of the PTFA180701FV4FWSA1 device, the gate voltage can be varied from 0V to 6V. Thus, the device can be used to control not only the amount of current flowing, but also the frequency. This makes it ideal for applications such as Wi-Fi, where frequencies need to be precisely controlled.
FETs are also known for their good linearity. This means that the current flowing between the source and drain will vary linearly when the voltage applied to the gate is changed. This is important since it means that the amplitude of the signal passed by the device is constant. Thus, it can be used to transfer high-fidelity audio or video signals without distortion. In addition, the linearity of an FET also means that it can be used for sensitive circuitry such as radio receivers, where the gain needs to remain consistent.
The small size of the PTFA180701FV4FWSA1 also makes it attractive for many applications. These devices are much smaller than their predecessors, making them ideal for portable and handheld devices. This device is also inexpensive, making it an attractive option for those who need a high-performance FET. Finally, its high-speed operation makes it suitable for use in frequency synthesizers and other high-speed communications devices.
In summary, the PTFA180701FV4FWSA1 is a great example of modern RF FET technology. It offers excellent linearity, small size, and low power consumption. These features make it ideal for radio frequency and microwave applications, including Wi-Fi, short-range wireless communications equipment, and applications that require high-test linearity. With its excellent performance, high-speed operation, and low cost, this device is an excellent solution for RF and microwave applications.
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PTFA210601EV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 60W H-362... |
PTFA212001F/1 P4 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 200W H-37... |
PTFA210601EV4R250FTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 60W H-362... |
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PTFA092201FV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 220W H-37... |
PTFA181001GL V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W PG-6... |
PTFA191001EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W H-36... |
PTFA091201GL V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 120W PG-6... |
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