PTFA211801E V4

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.14GHz
Gain:	15.5dB
Voltage - Test:	28V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	35W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads
Supplier Device Package:	H-36260-2
Base Part Number:	PTFA211801

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PTFA211801E V4 Application Field and Working Principle

PTFA211801E is a high-performance, single-pole, double-throw (SPDT) RF switch, providing latching control and low insertion losses required in a variety of designs. This switch can be used in a range of applications, including but not limited to, wireless multiplexer, antenna switch, general purpose switching and attenuator.The PTFA211801E V4 is a SAW-optimized RF switch that exhibits good linearity and insertion loss characteristics over the 0.8 to 6.0 GHz frequency range, with typical insertion losses of 0.8dB. The switch has a minimum isolation of 40dB and maximum power handling of 3 Watts in the RF port and 10mW in the control port. The switch supports low control voltage from 0V to 5V and is capable of switching a wide range of frequencies, providing high linearity and minimal insertion loss.The PTFA211801E V4 utilizes a MEMS-based RF microphone switch, which has a wide frequency range, low insertion loss and high isolation, providing a cost-efficient solution for small-scale antenna and application switches. The MEMS switch is designed to be very low power, drawing only 2mW of control power, allowing it to operate without a separate power source. The MEMS process also enables faster switch actuation and switching times of less than 10μs, making it an ideal choice for demanding applications.The functionality of the PTFA211801E V4 is based on a metal-oxide semiconductor (MOS) FET, which operates as a switch device. The MOSFET is controlled by an external DC voltage source, and can switch between two states when activated by the voltage source, thereby allowing for a range of control and switching functions.The PTFA211801E V4 utilizes a combination of field-effect and surface-acoustic wave (SAW) techniques, which enable an improved RF performance when compared to conventional surface-mount technologies. The combination of these techniques results in excellent linearity, low insertion loss, high isolation and low power consumption. The SAW-based switch utilizes an interdigitated microelectromechanical (MEMS) process to filter out high frequency noise and improve linearity, while the field-effect transistors provide low-distortion, low-power and high-bandwidth switching.In addition to its excellent RF performance, the PTFA211801E V4 is also extremely reliable and rugged, with a temperature range of -40°C to +85°C. The switch is designed with a low ESD tolerance, making it suitable for high-volume markets such as mobile phones and other handheld devices.In summary, the PTFA211801E V4 is an ideal solution for a wide range of applications, offering superior RF performance. Its combination of SAW and FET technologies also makes it a cost-effective and highly reliable switch, making it a suitable choice for many applications.

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