PTFA192001EV4XWSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	LDMOS
Frequency:	1.99GHz
Gain:	15.9dB
Voltage - Test:	30V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	1.8A
Power - Output:	50W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads
Supplier Device Package:	H-36260-2
Base Part Number:	PTFA192001

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PTFA192001EV4XWSA1 is a surface mount RF n-channel enhancement mode FET, designed for applications requiring high power and portability. It is suitable for operation in the frequency and output power ranges of 0.1-3.5GHz and 10-100W, respectively. Since it is the only MOSFET to combine high power and small size in a single package, it is highly suitable for applications such as power amplification in mobile and laptop wireless communication systems, as well as in wireless broadband networks or as a broadcast transmitter.This device is manufactured using latest advanced process technologies, which ensures a very low noise figure, high efficiency and low feedback capacitance. The PTFA192001EV4XWSA1 is built on a 4x4mm plastic leadless chip carrier (QFN package), that provides a low-cost, low-profile and highly efficient design. The RF MOSFET operates by means of electrostatic bias control of an n-type semiconductor channel created in a silicon substrate. It consists of a source, drain and gate, which are insulated from each other by a thin silicon dioxide (SiO2) layer, known as the gate oxide. This layer is typically in the range of 0.1-1nm thick, and is responsible for regulating the current flowing between the source and drain terminals.The PTFA192001EV4XWSA1 is a high power RF MOSFET that exhibits a wide dynamic range of frequencies and power. When a voltage is applied to the gate terminal, it changes the potential of the SiO2 layer, which in turn causes the depletion region to decrease, allowing electrons in the channel to move more freely, thereby increasing the current flow between the source and drain. The input signal is provided to the gate of the device, which then amplifies the signal, such that the output at the drain is much higher than the input at the gate. This can be used to boost the signal, or in conjunction with other components, such as a power amplifier, to produce high power outputs. The PTFA192001EV4XWSA1 also offers good linearity, allowing for higher fidelity transmission of RF signals. Its low capacitance nature also allows it to be used in high-speed switching applications, due to its low internal capacitance and low-voltage operation levels. In conclusion, the PTFA192001EV4XWSA1 is an ideal solution for high power, portable applications. Its small package size, wide dynamic range and high power capabilities make it suitable for use in industries such as mobile and laptop wireless communication systems, as well as in wireless broadband networks or as a broadcast transmitter. Its low noise figure, high efficiency and low feedback capacitance make it suitable for use in environments that demand both high fidelity data transmission and power.

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