PTFA091201HL V1 R250

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	960MHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	750mA
Power - Output:	110W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads, Flanged
Supplier Device Package:	PG-64248-2
Base Part Number:	PTFA091201

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PTFA091201HL V1 R250 Application Field and Working PrincipleTransistors - FETs, MOSFETs - RFThe PTFA091201HLV1R250 transistor is a high-performance RF MOSFET that has been designed for applications operating in the frequency range from 0.2 GHz to 3 GHz. It is a self-contained single monolithic evaluation module used for RF power amplifier applications in a variety of radio frequency (RF) and microwave systems.The transistor has been designed to provide high gain, high output power, and fast settling time for broadband communication requirements in mobile base stations, satellite receiver front ends, radar systems, and power amplifiers up to 3 GHz. The device is designed to handle extremely high levels of output power, with a wide frequency range from 0.2 to 3GHz and a maximum peak input power of 1W. The device is constructed on a plastic package and operates at a maximum voltage of 30 V.The design of the device comprises of drain and gate lresistance layers, with reduced gate leakage and high breakdown voltage. The gate resistance layer is highly doped to reduce gate-source cross talk and improve control over the transfer function. The N-Channel structure is formed using an N-type dopant that is tailored to the bias requirements of the device. The drain-source channel resistance is precisely designed to give improved switching performance, to allow the device to be used at higher power levels.In addition, the output drain-source resistance is accurately tuned to give low output reflections and allow the device to exhibit maximum efficiency. The device is designed to work with a wide range of linear and non-linear modulation formats, so that it is suitable for both linear and non-linear power amplifier applications. The device is also equipped with a built-in ESD protection diode so that it can be safely operated in the field.The PTFA091201HLV1R250 transistor is well-suited for operation at frequencies up to 3 GHz. It is capable of providing high output power levels with few reflections and low distortion. The device is commonly used in a variety of RF and microwave systems such as base stations, satellite receiver front ends, and radar systems.The device exhibits electrical characteristics such as low gate-source capacitance and low gate leakage, allowing for high speed operation. This makes the PTFA091201HLV1R250 an effective choice for applications where fast switching times or maximum efficiency levels are required. The device\'s low gate-source capacitance also enables a very low turn-off speed, which results in minimal switching noise.The PTFA091201HLV1R250 is also unmatched for its thermal performance, allowing the device to be used in high-power applications with no thermal problems. In addition, the device is equipped with built-in ESD protection diode and status feedback circuits, ensuring safe operation.The PTFA091201HLV1R250 transistor is widely used in RF and microwave applications and is typically found in base stations, satellite receiver front end, and radar systems. Its characteristics enable the device to provide high power, fast response times and low noise and distortion, making it a great choice for these types of applications.

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