PTFA092213FLV5XWSA1

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	960MHz
Gain:	17.5dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.85A
Power - Output:	200W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads, Flanged
Supplier Device Package:	H-34288-4/2

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PTFA092213FLV5XWSA1 is a type of insulated gate bipolar transistor (IGBT) that is used in applications such as radio frequency (RF) switching, motor control, and power conversion. The device is traditionally composed of four main component materials: a gate oxide, a thyristor die, a ceramic package, and a conductive lead frame. In a typical application, the IGBT acts as a switch or an amplifier to control the flow of current through an electrical circuit. An IGBT is an energy-efficient, high-voltage electric switch that can be used to control both AC and DC power applications. Compared to a traditional transistor, such as a field-effect transistor (FET), an IGBT has a higher current rating, allowing it to handle higher currents than a FET with the same chip size. An IGBT is made up of two distinct semiconductor elements, the collector and the drift regions. The IGBT combines the functions of the two, with the collector acting as a switch and the drift region acting as an amplifier. The PTFA092213FLV5XWSA1 is an ideal choice for RF switching applications due to its high switching speed and low on-state resistance. The device operates in a range of 40 volts to 200 volts, with a maximum current rating of 22 amps. It also boasts a fast switching speed of 2 microseconds, making it well-suited to high-frequency applications.The working principle of the PTFA092213FLV5XWSA1 is based on the principle of electron tunneling. When a positive voltage is applied to the gate, electrons are allowed to tunnel through the gate oxide layer and apply a voltage across the IGBT junction. This causes the junction to turn on and allow current to flow between the collector and the drain, and from the drain to the source. When a negative voltage is applied to the gate, current flow between the collector and drain is blocked and the IGBT junction turns off.The PTFA092213FLV5XWSA1 is well-suited for a range of applications such as DC to AC power conversion, variable voltage and frequency power supply design, power switching for motor control, and RF switching. The device can be used in high-voltage applications and is suitable for high-frequency switching in switching regulators, power converters, and other power electronics applications. Due to its low on-state resistance and fast switching speed, the PTFA092213FLV5XWSA1 is a reliable choice for high-power and high-frequency applications.

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