
Allicdata Part #: | PTFA212001EV4R0XTMA1-ND |
Manufacturer Part#: |
PTFA212001EV4R0XTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | RF MOSFET LDMOS 30V H-36260-2 |
More Detail: | RF Mosfet LDMOS 30V 1.6A 2.11GHz ~ 2.17GHz 15.8dB ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Strip |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.11GHz ~ 2.17GHz |
Gain: | 15.8dB |
Voltage - Test: | 30V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 1.6A |
Power - Output: | 200W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-36260-2 |
Description
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Transistors - FETs, MOSFETs - RF
PTFA212001EV4R0XTMA1 is a field effect transistor (FET) that has been specifically designed for radio frequency (RF) applications. It is a monolithic microwave integrated circuit (MMIC) that features high gain, low noise, excellent off-state isolation and low insertion loss. The device operates at frequencies up to 5 GHz.The PTFA212001EV4R0XTMA1 is a N-Channel Silicon Carbide (SiC) depletion mode FET. It is unique in that it offers a lower dimensional profile than other FET technologies. The small form factor allows for higher integration and miniaturization in designs. The device is particularly useful for applications where space is limited or where efficiency gains are required.The PTFA212001EV4R0XTMA1 is designed for use in RF power amplifiers, RF switches and RF mixers. Its high-power handling capability allows for the transmission and reception of a wide range of signals. The device\'s low noise figure provides enhanced performance and better signal-to-noise ratio.The working principle of the PTFA212001EV4R0XTMA1 is based on controlling the current flow through the silicon channel by manipulating the electric field around the channel. The gate of the FET is connected to a positive voltage, which creates an electric field at the interface between the gate and the channel. This electric field is responsible for inducing a conducting channel in the silicon.The current flowing through this channel depends on the voltage applied to the gate. When a positive voltage is applied, the electron mobility increases, and more current is allowed to pass through the channel. When a negative voltage is applied, the electron mobility decreases, and less current passes through the channel.The PTFA212001EV4R0XTMA1 is a versatile device that can be used in a wide range of applications. It can be used as a switch or an amplifier in wireless communication systems. It can be used in power amplifiers to increase the signal strength of wireless signals. In addition, it can be used in RF mixers to modulate signals for transmission.The PTFA212001EV4R0XTMA1 is a useful device that offers high performance and low power consumption. It is an ideal choice for designers looking for an efficient and space-saving solution for RF applications.
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