PTFA071701EV4XWSA1 Allicdata Electronics
Allicdata Part #:

PTFA071701EV4XWSA1-ND

Manufacturer Part#:

PTFA071701EV4XWSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: FET RF LDMOS 170W H36248-2
More Detail: RF Mosfet LDMOS 30V 900mA 765MHz 18.7dB 150W H-362...
DataSheet: PTFA071701EV4XWSA1 datasheetPTFA071701EV4XWSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 765MHz
Gain: 18.7dB
Voltage - Test: 30V
Current Rating: --
Noise Figure: --
Current - Test: 900mA
Power - Output: 150W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads
Supplier Device Package: H-36248-2
Base Part Number: PTFA071701
Description

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The PTFA071701EV4XWSA1 is a type of field effect transistor (FET) designed for radio frequency (RF) applications. The device, which falls in the Depletion Mode FET category, offers excellent thermal stability, low noise, and high gain. It has the necessary characteristics and features to be used in many RF applications, including cellular and satellite communications, medical imaging, automotive communications and radar.

Characteristics and features

The PTFA071701EV4XWSA1 has a drain–source breakdown voltage of 250V and a junction-gate reverse voltage of 5V. The current rating at 25C is 900mA. It can be operated over a wide temperature range with little degradation in performance, from -50C to +165C. It operates from frequencies from 100MHz to 3GHz, has an available gain of 15dB, and a noise figure of 6dB.

Applications

The device can be used in various RF applications, including cellular and satellite communication, medical imaging, automotive communication, and radar systems. It can also be used in amplifiers and rf power stages.

Working Principle

The PTFA071701EV4XWSA1 is a depletion-mode FET, which means it will conduct a constant current from the drain to the source as long as a supply voltage is applied to the gate. The FET works by regulating the amount of current flowing through the device by means of an electric field created by the flow of electrons through a semiconductor layer, which is in turn regulated by the voltage applied to the gate. This electric field serves to deplete the channel of electrons, thus allowing current flow through the device and creating a voltage drop from the drain to the source.

Conclusion

The PTFA071701EV4XWSA1 is a FET designed mainly for RF applications. It has a drain-source breakdown voltage of 250V and a junction-gate reverse voltage of 5V, and can be operated over a wide temperature range. It can be used in amplifiers, rf power stages, and in various RF applications such as cellular and satellite communication, medical imaging, automotive communication, and radar systems.

The specific data is subject to PDF, and the above content is for reference

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