Allicdata Part #: | PTFA072401FL-V5-R0-ND |
Manufacturer Part#: |
PTFA072401FL-V5-R0 |
Price: | $ 77.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET LDMOS 30V H-34288-2 |
More Detail: | RF Mosfet LDMOS 30V 1.9A 725MHz ~ 770MHz 19dB 240W... |
DataSheet: | PTFA072401FL-V5-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 70.18970 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | LDMOS |
Frequency: | 725MHz ~ 770MHz |
Gain: | 19dB |
Voltage - Test: | 30V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 1.9A |
Power - Output: | 240W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads |
Supplier Device Package: | H-34288-2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PTFA072401FL-V5-R0 is a type of FETs and MOSFETs commonly used in the RF field. FETs, or Field-Effect Transistors, are three-terminal active electronic devices that can be used as electronic switches, amplifiers, and analog or pulse-width modulation converters. MOSFETs, or Metal-Oxide Semiconductor Field-Effect Transistors, are a type of FETs that are based on Metal-Oxide Semiconductor technology, offering improved performance and design flexibility. The PTFA072401FL-V5-R0 is a type of MOSFET known as a Depletion-Mode Transistor (DMT), which is a device that can be used in RF gain control applications.
The PTFA072401FL-V5-R0 is a low-noise and high-speed MOSFET, designed primarily for use in Voice-over-IP (VoIP) systems. Its maximum drain-source voltage (VDS) is 30V and its maximum drain current (ID) is 0.1A. It has a low gate-source capacitance (CGS) of 5.4pF, which is essential for low-noise performance. The on-resistance of this device is 0.64Ω, which allows for low power dissipation in the circuit. Additionally, the gate-source threshold voltage (VGS) is 4.5V, making this MOSFET ideal for applications such as digital and analog switching and power control.
The working principle of the PTFA072401FL-V5-R0 is based on the concept of field-effect. In a MOSFET, a voltage applied between the gate terminal and the source terminal results in an electric field, which modulates the conductivity of the channel between the source and the drain terminals. An increase in the gate voltage causes an increase in the conductivity of the channel, while a decrease in the gate voltage causes a decrease in the conductivity of the channel. The electric field is proportional to the amount of voltage applied, and the amount of current flowing through the channel is directly proportional to the electric field.
The PTFA072401FL-V5-R0 is commonly used in RF gain control applications, where it is used to control the amplification of an RF signal. This device is typically used in combination with an RF power amplifier, as the PTFA072401FL-V5-R0 can be used to modulate the amplifier\'s gain in response to a control voltage. Additionally, this device can also be used as an analog switch or for power control in a wide variety of applications.
In conclusion, the PTFA072401FL-V5-RR0 is a highly reliable MOSFET device that is ideal for use in RF gain control and switching applications. Its low gate-source capacitance and high on-resistance make it suitable for low-noise, high-speed applications such as Voice-over-IP systems, while its gate-source threshold voltage makes it a good choice for digital and analog switching as well as power control.
The specific data is subject to PDF, and the above content is for reference
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