PTFA092213ELV4R250XTMA2

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The PTFA092213ELV4R250XTMA2 is a radio frequency (RF) transistor, classified under transistors, field effect transistors (FETs) and MOSFETs. It is a power transistor design for RF applications, that features a maximum drain-source voltage of 250 V, a maximum drain current of 13 A, and a maximum gate-source voltage of 4V.

Due to its high power and wide range of specifications, the PTFA092213ELV4R250XTMA2 is ideal for use in high-powered RF applications, such as in wireless communication systems, radar systems, and telecommunication systems. It can also be used in audio power amplifiers, and high-voltage switching in automotive and industrial applications.

The PTFA092213ELV4R250XTMA2 is a depletion mode MOSFET, which is a type of transistor that operates in three modes; depletion, avalanche, and linear. The depletion mode is characterized by its high input impedance, which ensures the transistor will not draw current from its input signal. The transistor works in this mode by allowing majority carriers to flow from its gate to its source. The majority carriers must overcome a threshold voltage to be able to flow, and thus control the output of the transistor.

Avalanche mode occurs when the drain-source voltage of the transistor becomes higher than its breakdown voltage. In this mode, avalanche breakdown occurs and generates a large number of majority carriers that enable the transistor to pass a large current from its drain to its source. This mode is useful for high-power applications, as it allows for high-output signals without the loss of accuracy.

Finally, the linear mode is used for operation at low-frequency and low-power. This mode is characterized by a linear relation between the drain-source voltage and the drain current. In this mode, the transistor works as a reliable and efficient amplifier.

The PTFA092213ELV4R250XTMA2 is composed of three layers of n-MOSFETs arranged in triple parallel structure. This structure ensures that the transistor will retain a good stability and low output capacitance. It is also designed to minimize its on-state resistance, and to improve its gain and power output.

The PTFA092213ELV4R250XTMA2 is capable of switching up to 250V, and of delivering a maximum drain current of 13A. It also features a gate-source voltage of 4V, and a power dissipation of 900W. Its maximum operating temperature range is 85°C to 165°C, and its minimum operating temperature is – 55°C.

In conclusion, the PTFA092213ELV4R250XTMA2 is an ideal choice for high-power RF applications, as it features a wide range of specifications, including a maximum drain-source voltage of 250V, a maximum drain current of 13A, and a maximum gate-source voltage of 4V. It is also capable of switching up to 250V, and of delivering a maximum drain current of 13A. Its triple parallel configuration ensures good stability and low output capacitance, allowing it to operate effectively in high-power applications.

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